Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films
Date
2017Source Title
MRS Advances
Print ISSN
2059-8521
Publisher
Materials Research Society
Volume
2
Issue
14
Pages
799 - 804
Language
English
Type
ArticleItem Usage Stats
256
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206
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Abstract
In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.
Keywords
Atomic layer depositionHydrothermal
Luminescence
Defects
Deposition
Film growth
II-VI semiconductors
Luminescence
Metallic films
Nanorods
Photoluminescence
Thin films
Zinc oxide
Band-to-band recombination
Continuous layers
Crystalline lattice
hydrothermal
Hydrothermal deposition
Photoluminescence spectrum
Radiative recombination process
Vertically aligned
Atomic layer deposition
Permalink
http://hdl.handle.net/11693/37539Published Version (Please cite this version)
https://doi.org/10.1557/adv.2017.150Collections
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