Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films
Okyay, Ali Kemal
Materials Research Society
799 - 804
Item Usage Stats
MetadataShow full item record
In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.
KeywordsAtomic layer deposition
Radiative recombination process
Atomic layer deposition
Published Version (Please cite this version)https://doi.org/10.1557/adv.2017.150
Showing items related by title, author, creator and subject.
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Ozgit, C.; Donmez I.; Alevli, M.; Biyikli, N. (2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ...
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition Goldenberg, E.; Ozgit-Akgun, C.; Biyikli, N.; Kemal Okyay, A. (AVS Science and Technology Society, 2014)Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film ...
Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition Kizir, S.; Haider, A.; Biyikli, N. (AVS Science and Technology Society, 2016)Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 ï¿½C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt3 and N2/H2 plasma as group-III ...