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      Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films

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      Author(s)
      Chubenko, E.
      Bondarenko, V.
      Ghobadi, Amir
      Ulusoy, Gamze
      Topallı, Kağan
      Okyay, Ali Kemal
      Date
      2017
      Source Title
      MRS Advances
      Print ISSN
      2059-8521
      Publisher
      Materials Research Society
      Volume
      2
      Issue
      14
      Pages
      799 - 804
      Language
      English
      Type
      Article
      Item Usage Stats
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      206
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      Abstract
      In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.
      Keywords
      Atomic layer deposition
      Hydrothermal
      Luminescence
      Defects
      Deposition
      Film growth
      II-VI semiconductors
      Luminescence
      Metallic films
      Nanorods
      Photoluminescence
      Thin films
      Zinc oxide
      Band-to-band recombination
      Continuous layers
      Crystalline lattice
      hydrothermal
      Hydrothermal deposition
      Photoluminescence spectrum
      Radiative recombination process
      Vertically aligned
      Atomic layer deposition
      Permalink
      http://hdl.handle.net/11693/37539
      Published Version (Please cite this version)
      https://doi.org/10.1557/adv.2017.150
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
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