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dc.contributor.authorBahariqushchi R.en_US
dc.contributor.authorGündoğdu S.en_US
dc.contributor.authorAydinli A.en_US
dc.date.accessioned2018-04-12T11:10:06Z
dc.date.available2018-04-12T11:10:06Z
dc.date.issued2017en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/37322
dc.description.abstractModels that use phonon confinement fail to provide consistent results for nanocrystal sizes in differing dielectric matrices due to varying stress experienced by nanocrystals in different dielectric environments. In cases where direct measurement of stress is difficult, the possibility of stress saturation as a function of size opens up a window for the use of phonon confinement to determine size. We report on a test of this possibility in Ge: SixNy system. Ge nanocrystals (NCs) embedded in silicon nitride matrix have been fabricated using plasma enhanced chemical vapor deposition (PECVD) followed by post annealing in Ar ambient. Nanocrystal size dependence of Raman spectra was studied taking into account associated stress and an improved phonon confinement approach. Our analysis show same stress for NCs which have sizes below 7.0 nm allowing the use of phonon confinement to determine the nanocrystal size. The results are compared with TEM data and good agreement is observed. © 2017 Elsevier Ltden_US
dc.language.isoEnglishen_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.spmi.2017.06.020en_US
dc.subjectGermaniumen_US
dc.subjectMatrix algebraen_US
dc.subjectPhononsen_US
dc.subjectPlasma CVDen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSilicon nitrideen_US
dc.subjectConfined phononsen_US
dc.subjectDielectric matrixesen_US
dc.subjectDirect measurementen_US
dc.subjectGe nanocrystalsen_US
dc.subjectNanocrystal sizesen_US
dc.subjectPhonon confinementen_US
dc.subjectPlasma enhanced chemical vapor depositions (PE CVD)en_US
dc.subjectSilicon nitride matrixen_US
dc.subjectNanocrystalsen_US
dc.titleCorrelation of TEM data with confined phonons to determine strain and size of Ge nanocrystals embedded in SixNy matrixen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage90en_US
dc.citation.epage95en_US
dc.citation.volumeNumber111en_US
dc.identifier.doi10.1016/j.spmi.2017.06.020en_US
dc.publisherAcademic Pressen_US
dc.embargo.release2019-11-01en_US


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