A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
Khan, Talha Masood
Celik, Ozan Onur
Okyay, Ali Kemal
International Journal of Microwave and Wireless Technologies
Cambridge University Press
1905 - 1913
Item Usage Stats
MetadataShow full item record
In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.
Schottky barrier diodes
Lumped equivalent circuit
Planar Schottky diodes
Finite element method
Published Version (Please cite this version)http://dx.doi.org/10.1017/S1759078717000940
Showing items related by title, author, creator and subject.
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range Arslan, E.; Çakmak, H.; Özbay, Ekmel (Elsevier, 2012-07-27)The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and ...
Özbay, Ekmel; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1997-05)We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption ...
Ocak, Y.S.; Genisel, M.F.; Kiliçoǧlu, T. (2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...