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dc.contributor.authorOnen, A.en_US
dc.contributor.authorKecik, D.en_US
dc.contributor.authorDurgun, Enginen_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2018-04-12T11:08:56Z
dc.date.available2018-04-12T11:08:56Z
dc.date.issued2017-11en_US
dc.identifier.issn1932-7447
dc.identifier.urihttp://hdl.handle.net/11693/37293
dc.description.abstractLateral and vertical heterostructures constructed of two-dimensional (2D) single-layer h-GaN and h-AlN display novel electronic and optical properties and diverse quantum structures to be utilized in 2D device applications. Lateral heterostructures formed by periodically repeating narrow h-GaN and h-AlN stripes, which are joined commensurately along their armchair edges, behave as composite semiconducting materials. Direct-indirect characters of the fundamental band gaps and their values vary with the widths of these stripes. However, for relatively wider stripes, electronic states are confined in different stripes and make a semiconductor-semiconductor junction with normal band alignment. This way one-dimensinonal multiple quantum well structures can be generated with electrons and holes confined to h-GaN stripes. Vertical heterostructures formed by thin stacks of h-GaN and h-AlN are composite semiconductors with a tunable fundamental band gap. However, depending on the stacking sequence and number of constituent sheets in the stacks, the vertical heterostructure can transform into a junction, which displays staggered band alignment with electrons and holes separated in different stacks. The weak bonds between the cations and anions in adjacent layers distinguish these heterostructures from those fabricated using thin films of GaN and AlN thin films in wurtzite structure, as well as from van der Waals solids. Despite the complexities due to confinement effects and charge transfer across the interface, the band diagram of the heterostructures in the direct space and band lineup are conveniently revealed from the electronic structure projected to the atoms or layers. Prominent features in the optical spectra of the lateral composite structures are observed within the limits of those of 2D parent constituents; however, significant deviations from pristine 2D constituents are observed for vertical heterostructures. Important dimensionality effects are revealed in the lateral and vertical heterostructures.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Physical Chemistry Cen_US
dc.relation.isversionofhttps://doi.org/10.1021/acs.jpcc.7b08344en_US
dc.subjectAluminum compoundsen_US
dc.subjectCharge transferen_US
dc.subjectDisplay devicesen_US
dc.subjectElectronic structureen_US
dc.subjectEnergy gapen_US
dc.subjectGallium compoundsen_US
dc.subjectGallium nitrideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectOptical propertiesen_US
dc.subjectSemiconductor junctionsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectThin filmsen_US
dc.subjectVan der Waals forcesen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectZinc sulfideen_US
dc.subjectConfinement effectsen_US
dc.subjectElectron confinementen_US
dc.subjectElectronic and optical propertiesen_US
dc.subjectFundamental band gapen_US
dc.subjectMultiple quantum-well structuresen_US
dc.subjectSemiconducting materialsen_US
dc.subjectTwo Dimensional (2 D)en_US
dc.subjectVertical heterostructureen_US
dc.subjectHeterojunctionsen_US
dc.titleLateral and vertical heterostructures of h-GaN/h-AlN: electron confinement, band lineup, and quantum structuresen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage27098en_US
dc.citation.epage27110en_US
dc.citation.volumeNumber121en_US
dc.citation.issueNumber48en_US
dc.identifier.doi10.1021/acs.jpcc.7b08344en_US
dc.publisherAmerican Chemical Societyen_US
dc.contributor.bilkentauthorÇıracı, Salim
dc.contributor.bilkentauthorDurgun, Engin


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