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      Effects of thickness on the metal-insulator transition in free-standing vanadium dioxide nanocrystals

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      Author(s)
      Fadlelmula, M. M.
      Sürmeli, E. C.
      Ramezani, M.
      Kasırga, T. S.
      Date
      2017
      Source Title
      Nano Letters
      Print ISSN
      1530-6984
      Publisher
      American Chemical Society
      Volume
      17
      Issue
      3
      Pages
      1762 - 1767
      Language
      English
      Type
      Article
      Item Usage Stats
      195
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      293
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      Abstract
      Controlling solid state phase transitions via external stimuli offers rich physics along with possibilities of unparalleled applications in electronics and optics. The well-known metal-insulator transition (MIT) in vanadium dioxide (VO2) is one instance of such phase transitions emerging from strong electronic correlations. Inducing the MIT using electric field has been investigated extensively for the applications in electrical and ultrafast optical switching. However, as the Thomas-Fermi screening length is very short, for considerable alteration in the material’s properties with electric field induced MIT, crystals below 10 nm are needed. So far, the only way to achieve thin crystals of VO2 has been via epitaxial growth techniques. Yet, stress due to lattice mismatch as well as interdiffusion with the substrate complicate the studies. Here, we show that free-standing vapor-phase grown crystals of VO2 can be milled down to the desired thickness using argon ion-beam milling without compromising their electronic and structural properties. Among our results, we show that even below 4 nm thickness the MIT persists and the transition temperature is lowered in two-terminal devices as the crystal gets thinner. The findings in this Letter can be applied to similar strongly correlated materials to study quantum confinement effects.
      Keywords
      Argon ion beam milling
      Metal−insulator transition
      Strongly correlated materials
      Vanadium dioxide
      Argon
      Electric fields
      Ion beams
      Lattice mismatch
      Metal insulator boundaries
      Milling (machining)
      Semiconductor insulator boundaries
      Vanadium
      Argon ion beam
      Electronic and structural properties
      Quantum confinement effects
      Solid-state phase transition
      Strong electronic correlations
      Strongly correlated materials
      Ultrafast optical switching
      Vanadium dioxide
      Metal insulator transition
      Permalink
      http://hdl.handle.net/11693/37288
      Published Version (Please cite this version)
      https://doi.org/10.1021/acs.nanolett.6b05067
      Collections
      • Department of Physics 2485
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
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