Effects of thickness on the metal-insulator transition in free-standing vanadium dioxide nanocrystals
Fadlelmula, M. M.
Sürmeli, E. C.
Kasırga, T. S.
American Chemical Society
1762 - 1767
Item Usage Stats
MetadataShow full item record
Controlling solid state phase transitions via external stimuli offers rich physics along with possibilities of unparalleled applications in electronics and optics. The well-known metal-insulator transition (MIT) in vanadium dioxide (VO2) is one instance of such phase transitions emerging from strong electronic correlations. Inducing the MIT using electric field has been investigated extensively for the applications in electrical and ultrafast optical switching. However, as the Thomas-Fermi screening length is very short, for considerable alteration in the material’s properties with electric field induced MIT, crystals below 10 nm are needed. So far, the only way to achieve thin crystals of VO2 has been via epitaxial growth techniques. Yet, stress due to lattice mismatch as well as interdiffusion with the substrate complicate the studies. Here, we show that free-standing vapor-phase grown crystals of VO2 can be milled down to the desired thickness using argon ion-beam milling without compromising their electronic and structural properties. Among our results, we show that even below 4 nm thickness the MIT persists and the transition temperature is lowered in two-terminal devices as the crystal gets thinner. The findings in this Letter can be applied to similar strongly correlated materials to study quantum confinement effects.
KeywordsArgon ion beam milling
Strongly correlated materials
Metal insulator boundaries
Semiconductor insulator boundaries
Argon ion beam
Electronic and structural properties
Quantum confinement effects
Solid-state phase transition
Strong electronic correlations
Strongly correlated materials
Ultrafast optical switching
Metal insulator transition
Published Version (Please cite this version)https://doi.org/10.1021/acs.nanolett.6b05067
Showing items related by title, author, creator and subject.
Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2 Kasirga, T. S.; Coy, J. M.; Park, J. H.; Cobden, D. H. (Institute of Physics Publishing, 2016-07)Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, ...
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method Yildiz, A.; Lisesivdin, S. B.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel; Balkan, N. (Springer, 2009-12-03)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ...
Onbasli, M.C.; Okyay, Ali Kemal (SPIE, 2010)State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement ...