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dc.contributor.authorZhang, Y.en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorHernandez-Martinez, P. L.en_US
dc.contributor.authorZhu B.en_US
dc.contributor.authorLu S.en_US
dc.contributor.authorKang, X. J.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2018-04-12T11:06:34Z
dc.date.available2018-04-12T11:06:34Z
dc.date.issued2017en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/37228
dc.description.abstractDue to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4973743en_US
dc.subjectCharge injectionen_US
dc.subjectHole concentrationen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectDepletion regionen_US
dc.subjectElectron blocking layeren_US
dc.subjectElectron overflowen_US
dc.subjectExternal quantum efficiencyen_US
dc.subjectInGaN/GaN multiple quantum well light emitting diodesen_US
dc.subjectNon-radiative recombinationsen_US
dc.subjectNumerical computationsen_US
dc.subjectValence band barriersen_US
dc.subjectLight emitting diodesen_US
dc.titleInvestigation of p-type depletion doping for InGaN/GaN-based light-emitting diodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage033506-1en_US
dc.citation.epage033506-5en_US
dc.citation.volumeNumber110en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1063/1.4973743en_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.contributor.bilkentauthorDemir, Hilmi Volkanen_US


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