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      Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

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      Author(s)
      Zhang, Y.
      Zhang Z.-H.
      Tan S.T.
      Hernandez-Martinez, P. L.
      Zhu B.
      Lu S.
      Kang, X. J.
      Sun, X. W.
      Demir, Hilmi Volkan
      Date
      2017
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics Inc.
      Volume
      110
      Issue
      3
      Pages
      033506-1 - 033506-5
      Language
      English
      Type
      Article
      Item Usage Stats
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      351
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      Abstract
      Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.
      Keywords
      Charge injection
      Hole concentration
      Semiconducting indium compounds
      Semiconductor quantum wells
      Depletion region
      Electron blocking layer
      Electron overflow
      External quantum efficiency
      InGaN/GaN multiple quantum well light emitting diodes
      Non-radiative recombinations
      Numerical computations
      Valence band barriers
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/37228
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4973743
      Collections
      • Department of Electrical and Electronics Engineering 4016
      • Department of Physics 2551
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1180
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