• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Institute of Materials Science and Nanotechnology (UNAM)
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Institute of Materials Science and Nanotechnology (UNAM)
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices

      Thumbnail
      View / Download
      4.1 Mb
      Author(s)
      El-Atab, N.
      Ulusoy, T. G.
      Ghobadi, A.
      Suh, J.
      Islam, R.
      Okyay, Ali Kemal
      Saraswat, K.
      Nayfeh, A.
      Date
      2017
      Source Title
      Nanotechnology
      Print ISSN
      0957-4484
      Electronic ISSN
      1361-6528
      Publisher
      Institute of Physics Publishing Ltd.
      Volume
      28
      Issue
      44
      Language
      English
      Type
      Article
      Item Usage Stats
      140
      views
      145
      downloads
      Abstract
      The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20). X-ray photoelectron spectroscopy measurements show that a deep quantum well is formed in the Al2O3/ZrO2/Al2O3 system, which is substantially different to that in the bulk state of zirconia and is more favorable for memory application. Finally, a memory device with a ZrO2 nano-island charge-trapping layer is fabricated, and a wide memory window of 4.5 V is obtained at a low programming voltage of 5 V due to the large dielectric constant of the islands in addition to excellent endurance and retention characteristics.
      Keywords
      Atomic layer deposition
      Memory devices
      Zirconia
      Atomic layer deposition
      Atoms
      Charge trapping
      Data storage equipment
      Deposition
      High resolution transmission electron microscopy
      Nonvolatile storage
      Quantum theory
      Semiconductor quantum wells
      Transmission electron microscopy
      Zirconia
      Zirconium compounds
      Charge trapping layers
      Different substrates
      Large dielectric constant
      Memory applications
      Nonvolatile memory devices
      Programming voltage
      Raman measurements
      Retention characteristics
      X ray photoelectron spectroscopy
      Permalink
      http://hdl.handle.net/11693/37171
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/1361-6528/aa87e5
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      LoginRegister

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy