Wideband 'black silicon' for mid-infrared applications
Journal of Optics (United Kingdom)
Institute of Physics Publishing
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In this paper, we investigate the absorption of mid-infrared light by low resistivity silicon textured via deep reactive ion etching. An analytical description of the wave propagation in black silicon texture is presented, showing agreement with the experiment and the computational analysis. We also study the dependence of absorption spectrum of black silicon structure on the electrical conductivity of silicon substrate. The structures investigated unveil wideband, all-silicon infrared absorbers applicable for infrared imaging and spectroscopy with simple CMOS compatible fabrication suitable for optoelectronic integration. © 2017 IOP Publishing Ltd.
deep reactive ion etching
Deep Reactive Ion Etching
Low resistivity silicon
Reactive ion etching
Published Version (Please cite this version)http://dx.doi.org/10.1088/2040-8986/aa69d6
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