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      Strongly Scale-Dependent Charge Transport From Interconnections of Silicon Quantum Dots and Nanowires

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      Author(s)
      Ilday, S.
      Date
      2017
      Source Title
      MRS Communications
      Print ISSN
      2159-6859
      Publisher
      Cambridge University Press
      Volume
      7
      Issue
      3
      Pages
      621 - 625
      Language
      English
      Type
      Article
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      Abstract
      We present the first characterization of strongly scale-dependent charge transport of a unique, hierarchical complex topology: an interconnected random network of silicon quantum dots (QDs) and nanowires. We show that this specific topology has different charge transport characteristics on the nanoscale and the microscale: photogenerated charge carriers tend to be confined inside the QDs and externally injected charge carriers flow preferably along the nanowires. The former enables expression of quantum confinement properties, and the latter mainly contributes to the good electrical conduction on the microscale. Our findings strongly suggest that this multifunctionality can be controlled and used in photovoltaic device applications.
      Keywords
      Carrier transport
      Charge carriers
      Nanocrystals
      Nanowires
      Quantum chemistry
      Topology
      Confinement properties
      Electrical conduction
      Injected charge carriers
      Multifunctionality
      Photogenerated charge carriers
      Photovoltaic devices
      Silicon quantum dots
      Transport characteristics
      Semiconductor quantum dots
      Permalink
      http://hdl.handle.net/11693/37012
      Published Version (Please cite this version)
      http://dx.doi.org/10.1557/mrc.2017.83
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      • Department of Physics 2397
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