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      • Department of Electrical and Electronics Engineering
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      Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect

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      Author(s)
      Ardalı, S.
      Tiras, E.
      Arslan, E.
      Özbay, Ekmel
      Date
      2016
      Source Title
      Optoelectronics and Advanced Materials, Rapid Communications
      Print ISSN
      0015-0193
      Electronic ISSN
      1563-5112
      Publisher
      Taylor & Francis Inc.
      Volume
      10
      Issue
      9-10
      Pages
      647 - 650
      Language
      English
      Type
      Article
      Item Usage Stats
      192
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      Abstract
      The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at the AlN/GaN interface. The Hall resistance of two-dimensional electron gas has been found to be quantized at multiple integers of von Klitzing constant that refers to the integer quantum Hall effect. The experimental data have been used to determine the Fermi energy, carrier density, and effective mass two-dimensional electrons. The results are in agreement with those derived from the longitudinal magnetoresistance in the same structure.
      Keywords
      Effective mass
      GaN
      Quantum hall effect
      Permalink
      http://hdl.handle.net/11693/36973
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