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      A charge inverter for III-nitride light-emitting diodes

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      Author(s)
      Zhang Z.-H.
      Zhang, Y.
      Bi, W.
      Geng, C.
      Xu S.
      Demir, Hilmi Volkan
      Sun, X. W.
      Date
      2016
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics Inc.
      Volume
      108
      Issue
      13
      Pages
      133502-1 - 133502-5
      Language
      English
      Type
      Article
      Item Usage Stats
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      260
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      Abstract
      In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO2 insulator layer on the p+-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p+-GaN and SiO2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p+-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs.
      Keywords
      Charge injection
      Efficiency
      Electric fields
      Electric inverters
      Electrodes
      Electron injection
      Gallium nitride
      Semiconductor diodes
      Wide band gap semiconductors
      External quantum efficiency
      High-efficiency
      Hole transports
      Improved hole injection
      Ingan/gan lightemitting diodes (LEDs)
      Insulator layer
      Local electric field
      Weak inversion region
      Light emitting diodes
      Permalink
      http://hdl.handle.net/11693/36657
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4945257
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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