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dc.contributor.authorHaider, A.en_US
dc.contributor.authorKizir, S.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2018-04-12T10:47:20Z
dc.date.available2018-04-12T10:47:20Z
dc.date.issued2016en_US
dc.identifier.urihttp://hdl.handle.net/11693/36656
dc.description.abstractIn this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.en_US
dc.language.isoEnglishen_US
dc.source.titleAIP Advancesen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4946786en_US
dc.subjectCarbonen_US
dc.subjectCarbon filmsen_US
dc.subjectCrystalline materialsen_US
dc.subjectDepositionen_US
dc.subjectElectron diffractionen_US
dc.subjectHigh resolution transmission electron microscopyen_US
dc.subjectIndiumen_US
dc.subjectNitrogenen_US
dc.subjectPulsed laser depositionen_US
dc.subjectRefractive indexen_US
dc.subjectSurface roughnessen_US
dc.subjectTemperatureen_US
dc.subjectThin filmsen_US
dc.subjectTransmission electron microscopyen_US
dc.subjectX ray diffractionen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectZinc sulfideen_US
dc.subjectCrystalline structureen_US
dc.subjectDeposition temperaturesen_US
dc.subjectLow substrate temperatureen_US
dc.subjectMorphological characterizationen_US
dc.subjectPolycrystalline structureen_US
dc.subjectQuantitative informationen_US
dc.subjectSelected area electron diffractionen_US
dc.subjectX-ray diffraction measurementsen_US
dc.subjectAtomic layer depositionen_US
dc.titleLow-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)en_US
dc.typeArticleen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.citation.spage045203-1en_US
dc.citation.epage045203-15en_US
dc.citation.volumeNumber6en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1063/1.4946786en_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.identifier.eissn2158-3226en_US


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