Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
American Institute of Physics Inc.
045203-1 - 045203-15
Item Usage Stats
In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.
High resolution transmission electron microscopy
Pulsed laser deposition
Transmission electron microscopy
X ray diffraction
X ray photoelectron spectroscopy
Low substrate temperature
Selected area electron diffraction
X-ray diffraction measurements
Atomic layer deposition
Published Version (Please cite this version)http://dx.doi.org/10.1063/1.4946786
Showing items related by title, author, creator and subject.
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Ozgit, C.; Donmez I.; Alevli, M.; Bıyıklı, Necmi (2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ...
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition Goldenberg, E.; Ozgit-Akgun, C.; Bıyıklı, Necmi; Kemal Okyay, A. (AVS Science and Technology Society, 2014)Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film ...
Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors Bıyıklı, Necmi; Haider A. (Institute of Physics Publishing, 2017)In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional ...