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      Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

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      Author
      Haider, A.
      Kizir, S.
      Bıyıklı, Necmi
      Date
      2016
      Source Title
      AIP Advances
      Electronic ISSN
      2158-3226
      Publisher
      American Institute of Physics Inc.
      Volume
      6
      Issue
      4
      Pages
      045203-1 - 045203-15
      Language
      English
      Type
      Article
      Item Usage Stats
      143
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      97
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      Abstract
      In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.
      Keywords
      Carbon
      Carbon films
      Crystalline materials
      Deposition
      Electron diffraction
      High resolution transmission electron microscopy
      Indium
      Nitrogen
      Pulsed laser deposition
      Refractive index
      Surface roughness
      Temperature
      Thin films
      Transmission electron microscopy
      X ray diffraction
      X ray photoelectron spectroscopy
      Zinc sulfide
      Crystalline structure
      Deposition temperatures
      Low substrate temperature
      Morphological characterization
      Polycrystalline structure
      Quantitative information
      Selected area electron diffraction
      X-ray diffraction measurements
      Atomic layer deposition
      Permalink
      http://hdl.handle.net/11693/36656
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4946786
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      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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