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      On the hole accelerator for III-nitride light-emitting diodes

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      Author(s)
      Zhang Z.-H.
      Zhang, Y.
      Bi, W.
      Geng, C.
      Xu S.
      Demir, Hilmi Volkan
      Sun, X. W.
      Date
      2016
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics Inc.
      Volume
      108
      Issue
      15
      Language
      English
      Type
      Article
      Item Usage Stats
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      362
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      Abstract
      In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed.
      Keywords
      Aluminum nitride
      Charge injection
      Electron injection
      Gallium nitride
      Heterojunctions
      Light emitting diodes
      Device efficiency
      Electron blocking layer
      GaN layers
      Hole injection
      III-Nitride
      N layers
      Parametric study
      Saturation levels
      Aluminum
      Permalink
      http://hdl.handle.net/11693/36655
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.4947025
      Collections
      • Department of Electrical and Electronics Engineering 4016
      • Department of Physics 2551
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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