On the hole accelerator for III-nitride light-emitting diodes
Date
2016Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
American Institute of Physics Inc.
Volume
108
Issue
15
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed.
Keywords
Aluminum nitrideCharge injection
Electron injection
Gallium nitride
Heterojunctions
Light emitting diodes
Device efficiency
Electron blocking layer
GaN layers
Hole injection
III-Nitride
N layers
Parametric study
Saturation levels
Aluminum