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dc.contributor.authorBakan, G.en_US
dc.contributor.authorGerislioglu, B.en_US
dc.contributor.authorDirisaglik, F.en_US
dc.contributor.authorJurado, Z.en_US
dc.contributor.authorSullivan, L.en_US
dc.contributor.authorDana, A.en_US
dc.contributor.authorLam, C.en_US
dc.contributor.authorGokirmak A.en_US
dc.contributor.authorSilva, H.en_US
dc.date.accessioned2018-04-12T10:46:52Z
dc.date.available2018-04-12T10:46:52Z
dc.date.issued2016-10en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/36643
dc.description.abstractPhase-change memory (PCM) devices are enabled by amorphization- and crystallization-induced changes in the devices' electrical resistances. Amorphization is achieved by melting and quenching the active volume using short duration electrical pulses (∼ns). The crystallization (set) pulse duration, however, is much longer and depends on the cell temperature reached during the pulse. Hence, the temperature-dependent crystallization process of the phase-change materials at the device level has to be well characterized to achieve fast PCM operations. A main challenge is determining the cell temperature during crystallization. Here, we report extraction of the temperature distribution on a lateral PCM cell during a set pulse using measured voltage-current characteristics and thermal modelling. The effect of the thermal properties of materials on the extracted cell temperature is also studied, and a better cell design is proposed for more accurate temperature extraction. The demonstrated study provides promising results for characterization of the temperature-dependent crystallization process within a cell.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.4966168en_US
dc.subjectAmorphizationen_US
dc.subjectCellsen_US
dc.subjectCharacterizationen_US
dc.subjectCytologyen_US
dc.subjectExtractionen_US
dc.subjectPhase change memoryen_US
dc.subjectTemperature distributionen_US
dc.subjectCrystallization processen_US
dc.subjectElectrical resistancesen_US
dc.subjectMeasured voltagesen_US
dc.subjectPhase change memory (pcm)en_US
dc.subjectPhase change memory cellsen_US
dc.subjectTemperature dependenten_US
dc.subjectTemperature extractionen_US
dc.subjectThermal properties of materialsen_US
dc.subjectPhase change materialsen_US
dc.titleExtracting the temperature distribution on a phase-change memory cell during crystallizationen_US
dc.typeArticleen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.citation.spage164504-1en_US
dc.citation.epage164504-7en_US
dc.citation.volumeNumber120en_US
dc.citation.issueNumber16en_US
dc.identifier.doi10.1063/1.4966168en_US
dc.publisherAmerican Institute of Physics Inc.en_US


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