Demonstration of flexible thin film transistors with GaN channels
Date
2016
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
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American Institute of Physics Inc.
Volume
109
Issue
23
Pages
233504-1 - 233504-4
Language
English
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Abstract
We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) at 200 °C. TFTs exhibit 103 on-to-off current ratios and are shown to exhibit proper transistor saturation behavior in their output characteristics. Gate bias stress tests reveal that flexible GaN TFTs have extremely stable electrical characteristics. Overall fabrication thermal budget is below 200 °C, the lowest reported for the GaN based transistors so far. © 2016 Author(s)
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Keywords
Atomic layer deposition , Budget control , Deposition , Gallium alloys , Gallium nitride , Pulsed laser deposition , Thin film circuits , Thin films , Transistors , Electrical characteristic , Flexible substrate , Flexible thin films , Gallium nitrides (GaN) , Gate-bias stress , Output characteristics , Saturation behavior , Thin-film transistor (TFTs) , Thin film transistors