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dc.contributor.authorAltuntas, H.en_US
dc.contributor.authorBayrak, T.en_US
dc.contributor.authorKizir, S.en_US
dc.contributor.authorHaider, A.en_US
dc.contributor.authorBiyikli, N.en_US
dc.date.accessioned2018-04-12T10:45:08Z
dc.date.available2018-04-12T10:45:08Z
dc.date.issued2016en_US
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/11693/36584
dc.description.abstractIn this study, aluminum nitride (AlN) thin films were deposited at 200 �C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.en_US
dc.language.isoEnglishen_US
dc.source.titleSemiconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0268-1242/31/7/075003en_US
dc.subjectAluminum nitrideen_US
dc.subjectAtomic layer deposition (ALD)en_US
dc.subjectCurrent transporten_US
dc.subjectDielectricen_US
dc.subjectHollowcathode plasmaen_US
dc.subjectPlasma-assisted ALDen_US
dc.subjectAluminumen_US
dc.subjectAluminum coatingsen_US
dc.subjectAluminum nitrideen_US
dc.subjectAtomsen_US
dc.subjectCathodesen_US
dc.subjectColor centersen_US
dc.subjectDepositionen_US
dc.subjectDielectric lossesen_US
dc.subjectDielectric materialsen_US
dc.subjectDielectric propertiesen_US
dc.subjectDielectric relaxationen_US
dc.subjectElectrodesen_US
dc.subjectElectron sourcesen_US
dc.subjectMetal insulator boundariesen_US
dc.subjectMIS devicesen_US
dc.subjectNitridesen_US
dc.subjectNitrogen plasmaen_US
dc.subjectPoint defectsen_US
dc.subjectPulsed laser depositionen_US
dc.subjectRefractive indexen_US
dc.subjectStructural propertiesen_US
dc.subjectThin filmsen_US
dc.subjectX ray diffractionen_US
dc.subjectZinc sulfideen_US
dc.subjectCurrent transporten_US
dc.subjectDielectric-constant measurementsen_US
dc.subjectElectrical conduction mechanismsen_US
dc.subjectGrazing incidence x-ray diffractionen_US
dc.subjectHollow cathodesen_US
dc.subjectMetal insulator semiconductor capacitorsen_US
dc.subjectSingle phase crystalline structureen_US
dc.subjectSpectroscopic ellipsometersen_US
dc.subjectAtomic layer depositionen_US
dc.titleElectrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer depositionen_US
dc.typeArticleen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.citation.spage075003-1en_US
dc.citation.epage075003-7en_US
dc.citation.volumeNumber31en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1088/0268-1242/31/7/075003en_US
dc.publisherInstitute of Physics Publishingen_US
dc.identifier.eissn1361-6641en_US


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