Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
Date
2016Source Title
Semiconductor Science and Technology
Print ISSN
0268-1242
Electronic ISSN
1361-6641
Publisher
Institute of Physics Publishing
Volume
31
Issue
7
Pages
075003-1 - 075003-7
Language
English
Type
ArticleItem Usage Stats
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Abstract
In this study, aluminum nitride (AlN) thin films were deposited at 200 �C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.
Keywords
Aluminum nitrideAtomic layer deposition (ALD)
Current transport
Dielectric
Hollowcathode plasma
Plasma-assisted ALD
Aluminum
Aluminum coatings
Aluminum nitride
Atoms
Cathodes
Color centers
Deposition
Dielectric losses
Dielectric materials
Dielectric properties
Dielectric relaxation
Electrodes
Electron sources
Metal insulator boundaries
MIS devices
Nitrides
Nitrogen plasma
Point defects
Pulsed laser deposition
Refractive index
Structural properties
Thin films
X ray diffraction
Zinc sulfide
Current transport
Dielectric-constant measurements
Electrical conduction mechanisms
Grazing incidence x-ray diffraction
Hollow cathodes
Metal insulator semiconductor capacitors
Single phase crystalline structure
Spectroscopic ellipsometers
Atomic layer deposition
Permalink
http://hdl.handle.net/11693/36584Published Version (Please cite this version)
http://dx.doi.org/10.1088/0268-1242/31/7/075003Collections
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