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      Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

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      Author(s)
      Altuntas, H.
      Bayrak, T.
      Kizir, S.
      Haider, A.
      Bıyıklı, Necmi
      Date
      2016
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Electronic ISSN
      1361-6641
      Publisher
      Institute of Physics Publishing
      Volume
      31
      Issue
      7
      Pages
      075003-1 - 075003-7
      Language
      English
      Type
      Article
      Item Usage Stats
      332
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      465
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      Abstract
      In this study, aluminum nitride (AlN) thin films were deposited at 200 �C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.
      Keywords
      Aluminum nitride
      Atomic layer deposition (ALD)
      Current transport
      Dielectric
      Hollowcathode plasma
      Plasma-assisted ALD
      Aluminum
      Aluminum coatings
      Aluminum nitride
      Atoms
      Cathodes
      Color centers
      Deposition
      Dielectric losses
      Dielectric materials
      Dielectric properties
      Dielectric relaxation
      Electrodes
      Electron sources
      Metal insulator boundaries
      MIS devices
      Nitrides
      Nitrogen plasma
      Point defects
      Pulsed laser deposition
      Refractive index
      Structural properties
      Thin films
      X ray diffraction
      Zinc sulfide
      Current transport
      Dielectric-constant measurements
      Electrical conduction mechanisms
      Grazing incidence x-ray diffraction
      Hollow cathodes
      Metal insulator semiconductor capacitors
      Single phase crystalline structure
      Spectroscopic ellipsometers
      Atomic layer deposition
      Permalink
      http://hdl.handle.net/11693/36584
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0268-1242/31/7/075003
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      • Institute of Materials Science and Nanotechnology (UNAM) 2258
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