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      Practical multi-featured perfect absorber utilizing high conductivity silicon

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      Author(s)
      Gok, A.
      Yilmaz, M.
      Bıyıklı, N.
      Topallı, K.
      Okyay, Ali Kemal
      Date
      2016
      Source Title
      Journal of Optics (United Kingdom)
      Print ISSN
      2040-8978
      Publisher
      Institute of Physics Publishing
      Volume
      18
      Issue
      3
      Pages
      1 - 5
      Language
      English
      Type
      Article
      Item Usage Stats
      189
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      245
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      Abstract
      We designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth as high as 2.5 μm is demonstrated. We used a silicon-on-insulator (SOI) wafer which consists of n-type silicon (Si) device layer, silicon dioxide (SiO2) as buried oxide layer, and n-type Si handle layer. The center wavelength and bandwidth can be tuned by adjusting the conductivity of the Si device and handle layers as well as the thicknesses of the device and buried oxide layers. We demonstrate proof-of-concept absorber surfaces experimentally. Such absorber surfaces are easy to microfabricate because the absorbers do not require elaborate microfabrication steps such as patterning. Due to the structural simplicity, low-cost fabrication, wide spectrum range of operation, and band properties of the perfect absorber, the proposed multi-featured perfect absorber surfaces are promising for many applications. These include sensing devices, surface enhanced infrared absorption applications, solar cells, meta-materials, frequency selective sensors and modulators. © 2016 IOP Publishing Ltd.
      Keywords
      absorber
      absorption
      conductivity
      resonance
      silicon
      Absorption
      Bandwidth
      Dosimetry
      Electric conductivity
      Light absorption
      Resonance
      Semiconducting silicon
      Silicon
      Silicon on insulator technology
      Silicon oxides
      absorber
      Buried oxide layers
      Center wavelength
      Frequency-selective
      High conductivity
      Low cost fabrication
      Silicon on insulator wafers
      Surface-enhanced infrared absorptions
      Silicon wafers
      Permalink
      http://hdl.handle.net/11693/36578
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/2040-8978/18/3/035002
      Collections
      • Department of Electrical and Electronics Engineering 3863
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
      • Nanotechnology Research Center (NANOTAM) 1125
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