Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics
Date
2017Source Title
Physica Status Solidi (C) Current Topics in Solid State Physics
Print ISSN
1862-6351
Publisher
Wiley-VCH Verlag
Volume
14
Issue
9
Language
English
Type
ArticleItem Usage Stats
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Abstract
We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
3D integrationAtomic layer deposition
Thin film transistors
Atomic layer deposition
Atoms
Deposition
Metallic films
Metals
Optical films
Thin film transistors
Thin films
Zinc oxide
3-D integration
Effective mobilities
Electrical characteristic
Fabrication method
High packing density
Semi-conducting metal oxides
Thin film electronics
Threedimensional (3-d)
Thin film circuits