Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics
Date
2017
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Abstract
We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Physica Status Solidi (C) Current Topics in Solid State Physics
Publisher
Wiley-VCH Verlag
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Keywords
3D integration, Atomic layer deposition, Thin film transistors, Atomic layer deposition, Atoms, Deposition, Metallic films, Metals, Optical films, Thin film transistors, Thin films, Zinc oxide, 3-D integration, Effective mobilities, Electrical characteristic, Fabrication method, High packing density, Semi-conducting metal oxides, Thin film electronics, Threedimensional (3-d), Thin film circuits
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Language
English