An input matched X-band balanced low noise amplifier design and implementation using discrete transistors

Abstract

X-Band, which is defined as the frequency range from 8 GHz to 12 GHz by IEEE, is used for the applications such as satellite communications, radar and space communications. These applications require an input matched, high gain and low noise amplifier as a front-end component in their receiver chains. In this work, an input matched X-Band balanced low noise amplifier is designed and implemented by using GaAs HJ-FET transistor. Measurements of the fabricated amplifier show a maximum noise figure of 1.74 dB, a minimum gain of 12.1 dB and a minimum input return loss of 11.4 dB from 8.2 GHz to 8.4 GHz.