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      •   BUIR Home
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      • Bilkent Theses
      • Theses - Department of Electrical and Electronics Engineering
      • Dept. of Electrical and Electronics Engineering - Master's degree
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      An input matched X-band balanced low noise amplifier design and implementation using discrete transistors

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      Author(s)
      Ballı, Çağdaş
      Advisor
      Özbay, Ekmel
      Date
      2015-07
      Publisher
      Bilkent University
      Language
      English
      Type
      Thesis
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      Abstract
      X-Band, which is defined as the frequency range from 8 GHz to 12 GHz by IEEE, is used for the applications such as satellite communications, radar and space communications. These applications require an input matched, high gain and low noise amplifier as a front-end component in their receiver chains. In this work, an input matched X-Band balanced low noise amplifier is designed and implemented by using GaAs HJ-FET transistor. Measurements of the fabricated amplifier show a maximum noise figure of 1.74 dB, a minimum gain of 12.1 dB and a minimum input return loss of 11.4 dB from 8.2 GHz to 8.4 GHz.
      Keywords
      Low noice amplifier
      Balanced amplifier
      Noise figure
      Permalink
      http://hdl.handle.net/11693/35659
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      • Dept. of Electrical and Electronics Engineering - Master's degree 621
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