dc.contributor.advisor | Çıracı, Salim | |
dc.contributor.author | Gürbüz, Emel | |
dc.date.accessioned | 2017-08-09T12:33:25Z | |
dc.date.available | 2017-08-09T12:33:25Z | |
dc.date.copyright | 2017-07 | |
dc.date.issued | 2017-08 | |
dc.date.submitted | 2017-08-08 | |
dc.identifier.uri | http://hdl.handle.net/11693/33539 | |
dc.description | Cataloged from PDF version of article. | en_US |
dc.description | Thesis (M.S.): Bilkent University, Department of Physics, İhsan Doğramacı Bilkent University, 2017. | en_US |
dc.description | Includes bibliographical references (leaves 56-61). | en_US |
dc.description.abstract | This thesis, deals with the planar free-standing, single-layer, square-octagon (SO)
structures of GaN and AlN. We investigated single-layer and multilayer so-GaN
and so-AlN structures, their stability, electronic properties and functionalization;
adatom and vacancies using rst principles pseudopotential plane wave calculations.
We performed an extensive analysis of dynamical and thermal stability
in terms of ab-initio nite temperature molecular dynamics and phonon calculations
together with the analysis of Raman and infrared active modes. These
single layer square-octagon structures of GaN and AlN display directional mechanical
properties, and have fundamental indirect band gaps, which are smaller
than their hexagonal counter parts. These DFT band gaps, however, increase
and become wider upon correction. Under uniaxial and biaxial tensile strain
the fundamental band gaps decrease and can be closed. The energetics, binding
and resulting electronic structure of bilayer, trilayer and 3D layered structures
constructed by stacking of the single layers were examined. In contrast to the
van der Waals solids, a signi cant chemical bonding between layers a ects the
binding and transforms the planar geometry by inducing buckling. Depending on
the stacking sequence and geometry, energetics, number of weak vertical bonds
and direct band gap electronic structure display interesting variations promising
a wide range of tunability. Furthermore, electronic and magnetic properties of
these single-layer structures can be modi ed by adsorption of various adatoms,
or by creating neutral cation-anion vacancies. As a future work, in-plane and
vertical heterostructures of single layer so-GaN and so-AlN structures could be
considered. | en_US |
dc.description.statementofresponsibility | by Emel Gürbüz. | en_US |
dc.format.extent | xvii,65 leaves : charts ; 29 cm | en_US |
dc.language.iso | English | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | First principles | en_US |
dc.subject | Density functional theory (DFT) | en_US |
dc.subject | Two-dimensional (2D) materials | en_US |
dc.subject | Gallium nitride (GaN) | en_US |
dc.subject | Aluminium nitride (AlN) | en_US |
dc.subject | Multilayer solids | en_US |
dc.title | First principles study of 2D gallium nitride and aluminium nitride in square-octagon structure | en_US |
dc.title.alternative | 2B kare-sekizgen yapılı galyum nitrür ve aliminyum nitrür temel prensip hesaplanması | en_US |
dc.type | Thesis | en_US |
dc.department | Department of Physics | en_US |
dc.publisher | Bilkent University | en_US |
dc.description.degree | M.S. | en_US |
dc.identifier.itemid | B156087 | |