Fabrication and characterization of GaAs and InAs hall sensors
Author
Özdemir, Serdar
Advisor
Oral, Ahmet
Date
2004Publisher
Bilkent University
Language
English
Type
ThesisItem Usage Stats
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Abstract
Scanning Hall Probe Microscopy has become a widely used method for magnetic
field measurements in the last decade. For Scanning Hall Probe Microscopy, low
noise Hall sensors are fabricated from GaAs and InAs structures using optical
lithography techniques. Noise analysis of both types of sensors are done at 77
K and 300 K for various Hall currents. Minimum detectable magnetic fields are
calculated from these noise measurements. The range of the Hall currents that
makes the sensors work most efficiently are also calculated.