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dc.contributor.advisorÖzbay, Ekmelen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-07-01T11:00:22Z
dc.date.available2016-07-01T11:00:22Z
dc.date.issued2004
dc.identifier.urihttp://hdl.handle.net/11693/29487
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractHigh-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical agents, missile early warning systems, and secure intersatellite communication systems. These applications require high-performance UV photodetectors with low dark current, high responsivity, high detectivity, and fast time response. The widebandgap AlxGa1−xN ternary alloy is well-suited as a photodetector material for operation in the wavelength range of 200 nm to 365 nm. Its outstanding material properties (direct bandgap, tunable cut-off, allows heterostructures, intrinsically solar-blind) make AlxGa1−xN suitable for a variety of harsh environments. If properly constructed, AlxGa1−xN-based photodetectors could offer significant advantages over the older photomultiplier tube (PMT) technology in terms of size, cost, robustness, complexity, dark current, bandwidth, and solar-blind operation. The motivation behind this work is the need for high-performance, solid-state UV photodetectors that can be cost-effectively manufactured into high-density arrays. We have designed, fabricated, and characterized several visible/solar-blind AlxGa1−xN photodiode samples. With solar-blind AlxGa1−xN photodiode samples, we achieved excellent device performance in almost all aspects. Very low dark currents were measured with heterostructure AlxGa1−xN Schottky and p-i-n samples. The extremely low leakage characteristics resulted in record detectivity and noise performance. Detectivity performance comparable to PMT detectivity was achieved. True solar-blind operation (sub-280 nm cut-off) with high visible rejection was demonstrated. In addition, we improved the bandwidth performance of AlxGa1−xN-based solar-blind photodetectors by over an order of magnitude. Solar-blind Schottky, p-i-n, and metal-semiconductor-metal photodiode samples exhibited very fast pulse response with multi-GHz bandwidths.en_US
dc.description.statementofresponsibilityBıyıklı, Necmien_US
dc.format.extentxx, 156 leaves, illustrationsen_US
dc.language.isoEnglishen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDetectoren_US
dc.subjectHigh-Speeden_US
dc.subjectBandwidthen_US
dc.subjectDetectivityen_US
dc.subjectLow-Noiseen_US
dc.subjectDark Currenten_US
dc.subjectHigh-Performanceen_US
dc.subjectPhotodetectoren_US
dc.subjectMetal-Semiconductor-Metal (MSM) Photodiodeen_US
dc.subjectP-I-N Photodiodeen_US
dc.subjectSchottky Photodiodeen_US
dc.subjectHeterostructureen_US
dc.subjectHeterojunctionen_US
dc.subjectSolar-Blinden_US
dc.subjectVisible-Blinden_US
dc.subjectPhotodiodeen_US
dc.subjectWide-Bandgapen_US
dc.subjectAlGaN Alloyen_US
dc.subjectIII-Nitrideen_US
dc.subjectUltravioleten_US
dc.subject.lccTK8304 .B59 2004en_US
dc.subject.lcshPhotoelectronic devices.en_US
dc.titleHigh-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applicationsen_US
dc.typeThesisen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.publisherBilkent Universityen_US
dc.description.degreePh.D.en_US
dc.identifier.itemidBILKUTUPB083039


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