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dc.contributor.authorYu, H.-Y.en_US
dc.contributor.authorKobayashi, M.en_US
dc.contributor.authorJung, W. S.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNishi, Y.en_US
dc.contributor.authorSaraswat, K. C.en_US
dc.coverage.spatialBaltimore, MD, USAen_US
dc.date.accessioned2016-02-08T12:26:17Z
dc.date.available2016-02-08T12:26:17Z
dc.date.issued2009en_US
dc.identifier.issn0163-1918en_US
dc.identifier.urihttp://hdl.handle.net/11693/28653
dc.descriptionDate of Conference: 7-9 December 2009en_US
dc.descriptionConference Name: 2009 IEEE International Electron Devices Meeting, IEDM 2009en_US
dc.description.abstractWe demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of the 2009 IEEE International Electron Devices Meeting, IEDM 2009en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IEDM.2009.5424245en_US
dc.subjectHeteroepitaxyen_US
dc.subjectHigh quality single crystalsen_US
dc.subjectIn-situ dopingen_US
dc.subjectMonolithic integrationen_US
dc.subjectnMOSFETsen_US
dc.subjectRaised source/drainen_US
dc.subjectSeries resistancesen_US
dc.subjectSi CMOSen_US
dc.subjectSource and drainsen_US
dc.subjectSource/drain series resistancesen_US
dc.subjectElectric resistanceen_US
dc.subjectElectron devicesen_US
dc.subjectElectron mobilityen_US
dc.subjectEpitaxial growthen_US
dc.subjectGermaniumen_US
dc.subjectMonolithic integrated circuitsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.subjectSiliconen_US
dc.subjectSingle crystalsen_US
dc.subjectMOSFET devicesen_US
dc.titleHigh performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integrationen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage29.4.1en_US
dc.citation.epage29.4.4en_US
dc.identifier.doi10.1109/IEDM.2009.5424245en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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