High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
Okyay, A., K.
Technical Digest - International Electron Devices Meeting, IEDM
29.4.1 - 29.4.4
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28653
We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform. © 2009 IEEE.
- Conference Paper 2294