High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
Author
Yu, H.-Y.
Kobayashi, M.
Jung, W. S.
Okyay, Ali Kemal
Nishi, Y.
Saraswat, K. C.
Date
2009Source Title
Proceedings of the 2009 IEEE International Electron Devices Meeting, IEDM 2009
Print ISSN
0163-1918
Publisher
IEEE
Pages
29.4.1 - 29.4.4
Language
English
Type
Conference PaperItem Usage Stats
117
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Abstract
We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.
Keywords
HeteroepitaxyHigh quality single crystals
In-situ doping
Monolithic integration
nMOSFETs
Raised source/drain
Series resistances
Si CMOS
Source and drains
Source/drain series resistances
Electric resistance
Electron devices
Electron mobility
Epitaxial growth
Germanium
Monolithic integrated circuits
Semiconducting silicon compounds
Silicon
Single crystals
MOSFET devices