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      High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

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      Author
      Yu, H.-Y.
      Kobayashi, M.
      Jung, W. S.
      Okyay, Ali Kemal
      Nishi, Y.
      Saraswat, K. C.
      Date
      2009
      Source Title
      Proceedings of the 2009 IEEE International Electron Devices Meeting, IEDM 2009
      Print ISSN
      0163-1918
      Publisher
      IEEE
      Pages
      29.4.1 - 29.4.4
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.
      Keywords
      Heteroepitaxy
      High quality single crystals
      In-situ doping
      Monolithic integration
      nMOSFETs
      Raised source/drain
      Series resistances
      Si CMOS
      Source and drains
      Source/drain series resistances
      Electric resistance
      Electron devices
      Electron mobility
      Epitaxial growth
      Germanium
      Monolithic integrated circuits
      Semiconducting silicon compounds
      Silicon
      Single crystals
      MOSFET devices
      Permalink
      http://hdl.handle.net/11693/28653
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/IEDM.2009.5424245
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      • Department of Electrical and Electronics Engineering 3524
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