High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
Jung, W. S.
Okyay, Ali Kemal
Saraswat, K. C.
Proceedings of the 2009 IEEE International Electron Devices Meeting, IEDM 2009
29.4.1 - 29.4.4
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We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.
High quality single crystals
Source and drains
Source/drain series resistances
Monolithic integrated circuits
Semiconducting silicon compounds