SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers
Author
Ağan, S.
Aydınlı, Atilla
Date
2009Source Title
Physics, Chemistry and Application of Nanostructures: Proceedings of the International Conference on Nanomeeting, 2009
Publisher
World Scientific Publishing
Pages
77 - 80
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 °C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confinn presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal fonnation in multi layers was investigated by Raman spectroscopy and TEM.
Keywords
Cross section TEMEffect of annealing
Energy dispersive x-ray
Ge nanocrystals
High resolution
Nitrogen atmospheres
Si substrates
SiGe nanocrystals
Electron energy loss spectroscopy
Germanium
Photoelectrons
Silicon oxides
X ray photoelectron spectroscopy
Nanocrystals