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      SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers

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      Author
      Ağan, S.
      Aydınlı, Atilla
      Date
      2009
      Source Title
      Physics, Chemistry and Application of Nanostructures: Proceedings of the International Conference on Nanomeeting, 2009
      Publisher
      World Scientific Publishing
      Pages
      77 - 80
      Language
      English
      Type
      Conference Paper
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      Abstract
      We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 °C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confinn presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal fonnation in multi layers was investigated by Raman spectroscopy and TEM.
      Keywords
      Cross section TEM
      Effect of annealing
      Energy dispersive x-ray
      Ge nanocrystals
      High resolution
      Nitrogen atmospheres
      Si substrates
      SiGe nanocrystals
      Electron energy loss spectroscopy
      Germanium
      Photoelectrons
      Silicon oxides
      X ray photoelectron spectroscopy
      Nanocrystals
      Permalink
      http://hdl.handle.net/11693/28651
      Published Version (Please cite this version)
      https://doi.org/10.1142/9789814280365_0017
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      • Department of Physics 2329
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