SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiO x mul tila yers
Physics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009
77 - 80
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28651
We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 °C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confinn presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal fonnation in multi layers was investigated by Raman spectroscopy and TEM.