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dc.contributor.authorGurinovich L.I.en_US
dc.contributor.authorLutich, A.A.en_US
dc.contributor.authorStupak, A.P.en_US
dc.contributor.authorPrislopskii, S.Va.en_US
dc.contributor.authorArtemyev, M.V.en_US
dc.contributor.authorRusakov, E.K.en_US
dc.contributor.authorDemir, H. V.en_US
dc.date.accessioned2016-02-08T12:25:56Z
dc.date.available2016-02-08T12:25:56Z
dc.date.issued2009en_US
dc.identifier.urihttp://hdl.handle.net/11693/28640
dc.description.abstractWe studied electric field effects on optical properties of CdSe/ZnS nanorods integrated in thin films sandwiched between transparent electrodes. It was demonstrated that P-polarized component of the photoluminescence of CdSelZnS nanorods is quenched stronger by external electric field than the S-polarized component. Quantum dots are more sensitive to external electric field than the nanorods. A mechanism of external electric field influence on the luminescence spectrum of semiconductor nanorods is discussed.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009en_US
dc.subjectCdSe/ZnSen_US
dc.subjectExternal electric fielden_US
dc.subjectLuminescence spectrumen_US
dc.subjectP-polarizeden_US
dc.subjectS-polarizeden_US
dc.subjectSemiconductor nanorodsen_US
dc.subjectTransparent electrodeen_US
dc.subjectAngle measurementen_US
dc.subjectNanorodsen_US
dc.subjectOptical propertiesen_US
dc.subjectElectric field effectsen_US
dc.titleElectric field effects on optical properties of semiconductor nanorodsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage132en_US
dc.citation.epage135en_US


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