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      • Department of Electrical and Electronics Engineering
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      Wafer bonded capacitive micromachined underwater transducers

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      Author
      Olcum, S.
      Oǧuz, K.
      Şenlik, M.N.
      Yamaner F.Y.
      Bozkurt, A.
      Atalar, Abdullah
      Köymen H.
      Date
      2009
      Source Title
      Proceedings - IEEE Ultrasonics Symposium
      Print ISSN
      10510117
      Language
      English
      Type
      Conference Paper
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      Abstract
      In this work we have designed, fabricated and tested CMUTs as underwater transducers. Single CMUT membranes with three different radii and 380 microns of thickness are fabricated for the demonstration of an underwater CMUT element. The active area of the transducer is fabricated on top of a 3″ silicon wafer. The silicon wafer is bonded to a gold electrode coated glass substrate wafer 10 cm in diameter. Thermally grown silicon oxide layer is used as the insulation layer between membrane and substrate electrodes. Electrical contacts and insulation are made by epoxy layers. Single CMUT elements are tested in air and in water. Approximately 40% bandwidth is achieved around 25 KHz with a single underwater CMUT cell. Radiated pressure field due to second harmonic generation when the CMUTs are driven with high sinusoidal voltages is measured. ©2009 IEEE.
      Keywords
      Anodic bonding
      Capacitive micromachined ultrasonic transducers
      Component
      Second harmonic generation
      Underwater transducers
      Active area
      Anodic bonding
      Capacitive micromachined ultrasonic transducer
      Coated glass substrates
      Electrical contacts
      Epoxy layers
      Gold electrodes
      Insulation layers
      Micromachined
      Pressure field
      Second harmonic generation
      Silicon oxide layers
      Sinusoidal voltage
      Substrate electrodes
      Underwater transducers
      Fabrication
      Gold coatings
      Harmonic analysis
      Harmonic generation
      Nonlinear optics
      Semiconducting silicon compounds
      Silicon oxides
      Silicon wafers
      Substrates
      Transducers
      Ultrasonic equipment
      Ultrasonic measurement
      Ultrasonic waves
      Ultrasonics
      Wafer bonding
      Ultrasonic transducers
      Permalink
      http://hdl.handle.net/11693/28638
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/ULTSYM.2009.5441699
      Collections
      • Department of Electrical and Electronics Engineering 3337

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