Wafer bonded capacitive micromachined underwater transducers
Author
Olcum, Selim
Oǧuz, Kaan
Şenlik, Muhammed N.
Yamaner F. Y.
Bozkurt, A.
Atalar, Abdullah
Köymen, Hayrettin
Date
2009-09Source Title
Proceedings - 2009 IEEE International Ultrasonics Symposium
Publisher
IEEE
Pages
976 - 979
Language
English
Type
Conference PaperItem Usage Stats
201
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Abstract
In this work we have designed, fabricated and tested CMUTs as underwater transducers. Single CMUT membranes with three different radii and 380 microns of thickness are fabricated for the demonstration of an underwater CMUT element. The active area of the transducer is fabricated on top of a 3″ silicon wafer. The silicon wafer is bonded to a gold electrode coated glass substrate wafer 10 cm in diameter. Thermally grown silicon oxide layer is used as the insulation layer between membrane and substrate electrodes. Electrical contacts and insulation are made by epoxy layers. Single CMUT elements are tested in air and in water. Approximately 40% bandwidth is achieved around 25 KHz with a single underwater CMUT cell. Radiated pressure field due to second harmonic generation when the CMUTs are driven with high sinusoidal voltages is measured. ©2009 IEEE.
Keywords
Anodic bondingCapacitive micromachined ultrasonic transducers
Component
Second harmonic generation
Underwater transducers
Active area
Anodic bonding
Capacitive micromachined ultrasonic transducer
Coated glass substrates
Electrical contacts
Epoxy layers
Gold electrodes
Insulation layers
Micromachined
Pressure field
Silicon oxide layers
Sinusoidal voltage
Substrate electrodes
Underwater transducers
Fabrication
Gold coatings
Harmonic analysis
Harmonic generation
Nonlinear optics
Semiconducting silicon compounds
Silicon oxides
Silicon wafers
Substrates
Transducers
Ultrasonic equipment
Ultrasonic measurement
Ultrasonic waves
Ultrasonics
Wafer bonding
Ultrasonic transducers
Permalink
http://hdl.handle.net/11693/28638Published Version (Please cite this version)
http://dx.doi.org/10.1109/ULTSYM.2009.5441699Collections
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