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dc.contributor.authorAktaş, Özgüren_US
dc.contributor.authorTöral, Taylanen_US
dc.coverage.spatialCollege Park, MD, USA
dc.date.accessioned2016-02-08T12:25:42Z
dc.date.available2016-02-08T12:25:42Z
dc.date.issued2009-12en_US
dc.identifier.urihttp://hdl.handle.net/11693/28634
dc.descriptionDate of Conference: 9-11 Dec. 2009
dc.descriptionConference name: 2009 International Semiconductor Device Research Symposium
dc.description.abstractThis paper follows the approach in the works of Gui et al. (2007), that use the change in the current of carbon nanotube thin film transistors (CNT-TFT) with DNA attachment and DNA hybridization. The authors have studied the response of CNT-TFTs to DNA binding and hybridization. It was demonstrated for the first time that an increase in sensitivity is observed around the threshold voltage when sweeping the gate bias from negative to positive values. The results presented in this work suggest an improved approach to measuring the response of CNT-TFTs to DNA hybridization.en_US
dc.language.isoEnglishen_US
dc.source.titleInternational Semiconductor Device Research Symposium, ISDRS '09en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ISDRS.2009.5378116en_US
dc.subjectDNA
dc.subjectSensor phenomena and characterization
dc.subjectProbes
dc.subjectEducational institutions
dc.subjectGeometry
dc.subjectThin film transistors
dc.subjectPassivation
dc.subjectResists
dc.subjectTungsten
dc.subjectTesting
dc.titleGate bias characterization of CNT-TFT DNA sensorsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage1en_US
dc.citation.epage2en_US
dc.identifier.doi10.1109/ISDRS.2009.5378116en_US
dc.publisherIEEE


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