Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Date
2009Source Title
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Print ISSN
10928081
Pages
236 - 237
Language
English
Type
Conference PaperItem Usage Stats
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Show full item recordAbstract
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
Keywords
GaN templateMetal semiconductor metal photodetector
Semi-insulating GaN
Wide-band-gap semiconductor
Gallium alloys
Gallium nitride
Heterojunctions
Optoelectronic devices
Semiconducting gallium
Semiconducting gallium compounds
Silicon carbide
Photodetectors