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      Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors

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      Author
      Bütün, Serkan
      Gökkavas, Mutlu
      Yu, HongBo
      Strupinski, Vlodek
      Özbay, Ekmel
      Date
      2009-10
      Source Title
      2009 IEEE LEOS Annual Meeting Conference Proceedings
      Print ISSN
      1092-8081
      Publisher
      IEEE
      Pages
      236 - 237
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
      Keywords
      GaN template
      Metal semiconductor metal photodetector
      Semi-insulating GaN
      Wide-band-gap semiconductor
      Gallium alloys
      Gallium nitride
      Heterojunctions
      Optoelectronic devices
      Semiconducting gallium
      Semiconducting gallium compounds
      Silicon carbide
      Photodetectors
      Permalink
      http://hdl.handle.net/11693/28602
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/LEOS.2009.5343292
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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