Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors

Bütün, Serkan; Gökkavas, Mutlu; Yu, HongBo; Strupinski, Vlodek; Özbay, Ekmel

doi:10.1109/LEOS.2009.5343292

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Author

Bütün, Serkan

Gökkavas, Mutlu

Yu, HongBo

Strupinski, Vlodek

Özbay, Ekmel

Date

2009-10

Source Title

2009 IEEE LEOS Annual Meeting Conference Proceedings

Print ISSN

1092-8081

Publisher

IEEE

Pages

236 - 237

Language

English

Abstract

Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.

Keywords

GaN template
Metal semiconductor metal photodetector
Semi-insulating GaN
Wide-band-gap semiconductor
Gallium alloys
Gallium nitride
Heterojunctions
Optoelectronic devices
Semiconducting gallium
Semiconducting gallium compounds
Silicon carbide
Photodetectors

Permalink

http://hdl.handle.net/11693/28602

Published Version (Please cite this version)

http://dx.doi.org/10.1109/LEOS.2009.5343292