Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors

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Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors.pdf (440.19 KB)

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2009-10

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Abstract

Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.

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2009 IEEE LEOS Annual Meeting Conference Proceedings

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IEEE

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Keywords

GaN template, Metal semiconductor metal photodetector, Semi-insulating GaN, Wide-band-gap semiconductor, Gallium alloys, Gallium nitride, Heterojunctions, Optoelectronic devices, Semiconducting gallium, Semiconducting gallium compounds, Silicon carbide, Photodetectors

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http://hdl.handle.net/11693/28602

Published Version (Please cite this version)

http://dx.doi.org/10.1109/LEOS.2009.5343292

Collections

Scholarly Publications - Physics
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM
Scholarly Publications - UNAM

Language

English

Type

Conference Paper