Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Date
2009-10Source Title
2009 IEEE LEOS Annual Meeting Conference Proceedings
Print ISSN
1092-8081
Publisher
IEEE
Pages
236 - 237
Language
English
Type
Conference PaperItem Usage Stats
191
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147
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Abstract
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
Keywords
GaN templateMetal semiconductor metal photodetector
Semi-insulating GaN
Wide-band-gap semiconductor
Gallium alloys
Gallium nitride
Heterojunctions
Optoelectronic devices
Semiconducting gallium
Semiconducting gallium compounds
Silicon carbide
Photodetectors