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dc.contributor.authorSarı, Emreen_US
dc.contributor.authorNizamoğlu, Sedaten_US
dc.contributor.authorLee I.-H.en_US
dc.contributor.authorBaek J.-H.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialBelek-Antalya, Turkeyen_US
dc.date.accessioned2016-02-08T12:24:46Z
dc.date.available2016-02-08T12:24:46Z
dc.date.issued2009en_US
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/28599
dc.descriptionDate of Conference: 4-8 Oct. 2009en_US
dc.description.abstractWe report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.title2009 IEEE LEOS Annual Meeting Conference Proceedingsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2009.53en_US
dc.subjectBarrier layersen_US
dc.subjectC-plane sapphire substratesen_US
dc.subjectElectric field dependenceen_US
dc.subjectElectrostatic fielden_US
dc.subjectExternal electric fielden_US
dc.subjectFabricated deviceen_US
dc.subjectFermi's Golden Ruleen_US
dc.subjectIndium tin oxideen_US
dc.subjectInGaN/GaNen_US
dc.subjectMetallizationsen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectOrder of magnitudeen_US
dc.subjectPiN diodeen_US
dc.subjectQuantum heterostructuresen_US
dc.subjectQuantum wellen_US
dc.subjectRadiative recombinationen_US
dc.subjectRecombination lifetimeen_US
dc.subjectSemitransparent contactsen_US
dc.subjectSimulation resulten_US
dc.subjectStandard photolithographyen_US
dc.subjectCorundumen_US
dc.subjectCrystalsen_US
dc.subjectElectric field measurementen_US
dc.subjectElectric fieldsen_US
dc.subjectGallium nitrideen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectOrganic chemicalsen_US
dc.subjectReactive ion etchingen_US
dc.subjectSemiconducting galliumen_US
dc.subjectTinen_US
dc.subjectTransfer matrix methoden_US
dc.subjectGallium alloysen_US
dc.titleElectric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructuresen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage606en_US
dc.citation.epage607en_US
dc.identifier.doi10.1109/LEOS.2009.53en_US
dc.publisherIEEEen_US


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