Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
Author
Sarı, Emre
Nizamoğlu, Sedat
Lee I.-H.
Baek J.-H.
Demir, Hilmi Volkan
Date
2009Source Title
2009 IEEE LEOS Annual Meeting Conference Proceedings
Print ISSN
1092-8081
Publisher
IEEE
Pages
606 - 607
Language
English
Type
Conference PaperItem Usage Stats
109
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62
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Abstract
We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.
Keywords
Barrier layersC-plane sapphire substrates
Electric field dependence
Electrostatic field
External electric field
Fabricated device
Fermi's Golden Rule
Indium tin oxide
InGaN/GaN
Metallizations
Metalorganic chemical vapor deposition
Order of magnitude
PiN diode
Quantum heterostructures
Quantum well
Radiative recombination
Recombination lifetime
Semitransparent contacts
Simulation result
Standard photolithography
Corundum
Crystals
Electric field measurement
Electric fields
Gallium nitride
Metallorganic chemical vapor deposition
Organic chemicals
Reactive ion etching
Semiconducting gallium
Tin
Transfer matrix method
Gallium alloys
Permalink
http://hdl.handle.net/11693/28599Published Version (Please cite this version)
http://dx.doi.org/10.1109/LEOS.2009.53Collections
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