• About
  • Policies
  • What is openaccess
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures

      Thumbnail
      View / Download
      1.3 Mb
      Author
      Sarı, Emre
      Nizamoğlu, Sedat
      Lee I.-H.
      Baek J.-H.
      Demir, Hilmi Volkan
      Date
      2009
      Source Title
      2009 IEEE LEOS Annual Meeting Conference Proceedings
      Print ISSN
      1092-8081
      Publisher
      IEEE
      Pages
      606 - 607
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
      109
      views
      62
      downloads
      Abstract
      We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.
      Keywords
      Barrier layers
      C-plane sapphire substrates
      Electric field dependence
      Electrostatic field
      External electric field
      Fabricated device
      Fermi's Golden Rule
      Indium tin oxide
      InGaN/GaN
      Metallizations
      Metalorganic chemical vapor deposition
      Order of magnitude
      PiN diode
      Quantum heterostructures
      Quantum well
      Radiative recombination
      Recombination lifetime
      Semitransparent contacts
      Simulation result
      Standard photolithography
      Corundum
      Crystals
      Electric field measurement
      Electric fields
      Gallium nitride
      Metallorganic chemical vapor deposition
      Organic chemicals
      Reactive ion etching
      Semiconducting gallium
      Tin
      Transfer matrix method
      Gallium alloys
      Permalink
      http://hdl.handle.net/11693/28599
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/LEOS.2009.53
      Collections
      • Department of Electrical and Electronics Engineering 3613
      • Department of Physics 2345
      • Institute of Materials Science and Nanotechnology (UNAM) 1858
      Show full item record

      Related items

      Showing items related by title, author, creator and subject.

      • Thumbnail

        Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields 

        Sari, E.; Nizamoglu, S.; Lee, I. H.; Baek, J. H.; Demir, Hilmi Volkan (American Institute of Physics, 2009-05-29)
        Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization ...
      • Thumbnail

        A simple analytical expression for the gradient induced potential on active implants during MRI 

        Turk, E.A.; Kopanoglu, E.; Guney, S.; Bugdayci, K.E.; Ider, Y. Z.; Erturk, V. B.; Atalar, Ergin (2012)
        During magnetic resonance imaging, there is an interaction between the time-varying magnetic fields and the active implantable medical devices (AIMD). In this study, in order to express the nature of this interaction, ...
      • Thumbnail

        Liquid bulk rotation induced by electric field at free surface 

        Saghaei, T.; Moradi, A.-R.; Shirsavar, R.; Habibi, M. (American Institute of Physics Inc., 2015)
        In this paper, we induce rotation in a bulk of polar liquid with one free surface, by applying external crossed electric fields. We show that the induced rotation is due to the imposed stresses at the free surface of the ...

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartments

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 1771
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy