Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
2009 IEEE LEOS Annual Meeting Conference Proceedings
606 - 607
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We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.
C-plane sapphire substrates
Electric field dependence
External electric field
Fermi's Golden Rule
Indium tin oxide
Metalorganic chemical vapor deposition
Order of magnitude
Electric field measurement
Metallorganic chemical vapor deposition
Reactive ion etching
Transfer matrix method
Published Version (Please cite this version)http://dx.doi.org/10.1109/LEOS.2009.53
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