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dc.contributor.authorUran, C.en_US
dc.contributor.authorUnal, E.en_US
dc.contributor.authorKizil, R.en_US
dc.contributor.authorDemir, H. V.en_US
dc.date.accessioned2016-02-08T12:24:39Z
dc.date.available2016-02-08T12:24:39Z
dc.date.issued2009en_US
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/28593
dc.description.abstractDielectrophoresis (DEP) allows for electric field assisted assembly in spatially non-uniform field distribution, where the induced moment is translated into a net force on polarized particles towards the high field gradient. For example, for a spherical particle of radius r with a permittivity constant ofεp in a host medium with the permittivity ofε m, the dielectrophoretic force is given by (1): where r is the particle radius, ω is the angular frequency and Erms is the root mean square electric field. K is the Clausius-Mossotti function, which depends on the complex permittivity of the spherical particle and the medium [1].IEEE.en_US
dc.language.isoEnglishen_US
dc.source.titleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOSen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2009.5343282en_US
dc.subjectAngular frequenciesen_US
dc.subjectComplex permittivityen_US
dc.subjectDielectrophoresisen_US
dc.subjectDielectrophoretic forcesen_US
dc.subjectElectrical characterizationen_US
dc.subjectHigh fielden_US
dc.subjectHost mediumsen_US
dc.subjectNano-gapen_US
dc.subjectNanowire devicesen_US
dc.subjectNonuniform fielden_US
dc.subjectOn chipsen_US
dc.subjectPermittivity constanten_US
dc.subjectPolarized particlesen_US
dc.subjectRoot Mean squareen_US
dc.subjectSpherical particleen_US
dc.subjectDielectric devicesen_US
dc.subjectElectric fieldsen_US
dc.subjectElectrophoresisen_US
dc.subjectPermittivityen_US
dc.titleOn - chip integrated nanowire devices with controllable nanogap for manipulation, capturing, and electrical characterization of nanoparticlesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.departmentInstitute of Materials Science and Nanotechnology
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentNanototechnology Research Centeren_US
dc.citation.spage217en_US
dc.citation.epage218en_US
dc.identifier.doi10.1109/LEOS.2009.5343282en_US
dc.publisherIEEEen_US


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