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      Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AIGaN/AIN/GaN heterostructures

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      Author
      Taşçıoğlu, I.
      Aydemir, U.
      Şafak, Y.
      Özbay, Ekmel
      Date
      2010-03-28
      Source Title
      Surface and Interface Analysis
      Print ISSN
      0142-2421
      Electronic ISSN
      1096-9918
      Publisher
      Wiley
      Volume
      42
      Issue
      6-7
      Pages
      812 - 815
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitance-voltage (C-V) and conductancevoltage (G/ω-V) of (Ni/Au)/Al xGa 1-xN/AIN/ GaN heterostructures as a function of the temperature have been investigated at 1 MHz. The admittance method allows us to obtain the parameters characterizing the metal/semiconductor interface phenomena as well as the bulk phenomena. The method revealed that the density of interface states decreases with increasing temperature. Such a behavior of N ss can be attributed to reordering and restructure of surface charges. The value of series R s decreases with decreasing temperature. This behavior of R s is in obvious disagreement with that reported in the literature. It is found that the N ss and R s of the structure are important parameters that strongly influence the electrical parameters of (Ni/Au)/Al xGa 1-XN/AlN/GaN(x = 0.22) heterostructures. In addition, in the forward bias region a negative contribution to the capacitance C has been observed, that decreases with the increasing temperature.
      Keywords
      (Ni/Au)/AlGaN/AlN/GaN heterostructures
      Frequency dependence
      Interface states
      Negative capacitance
      Series resistance
      Permalink
      http://hdl.handle.net/11693/28581
      Published Version (Please cite this version)
      https://doi.org/10.1002/sia.3249
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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