The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
Author
Altindal, S.
Şafak, Y.
Taşçloǧlu I.
Özbay, Ekmel
Date
2010Source Title
Surface and Interface Analysis
Print ISSN
0142-2421
Publisher
Wiley
Volume
42
Issue
6-7
Pages
803 - 806
Language
English
Type
ArticleItem Usage Stats
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Abstract
(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias barrier height (BH) (φBO), ideality factor (n), series resistance (Rs) of the structure, and the interface state density (Nss). Some of these parameters were determined from both I-V and admittance (C-V and G/ω-V) measurements at room temperature and at 1 MHz and were compared. The experimental results show that the value of N ss in a Schottky contact without passivation is nearly 1 order of magnitude larger than that in a Schottky contact with SiNx passivation layers. Also, the values of Rs increase with the increasing thickness of the passivation layer. In the forward bias region, the negative values of capacitance are an attractive result of this study. This negative capacitance disappears in presence of the passivation layer. Copyright © 2010 John Wiley & Sons, Ltd.
Keywords
(Ni/Au)/AlxGa1-xN/AlN/GaN heterostructuresFrequency dependence
Interface states
Negative capacitance
Series resistance
Frequency dependence
Heterostructures
Interface state
Negative capacitance
Series resistances
Aluminum
Capacitance
Crystals
Gallium
Heterojunctions
Silicon nitride
Passivation