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      The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures

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      Author
      Altindal, S.
      Şafak, Y.
      Taşçloǧlu I.
      Özbay, Ekmel
      Date
      2010
      Source Title
      Surface and Interface Analysis
      Print ISSN
      0142-2421
      Publisher
      Wiley
      Volume
      42
      Issue
      6-7
      Pages
      803 - 806
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      (Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias barrier height (BH) (φBO), ideality factor (n), series resistance (Rs) of the structure, and the interface state density (Nss). Some of these parameters were determined from both I-V and admittance (C-V and G/ω-V) measurements at room temperature and at 1 MHz and were compared. The experimental results show that the value of N ss in a Schottky contact without passivation is nearly 1 order of magnitude larger than that in a Schottky contact with SiNx passivation layers. Also, the values of Rs increase with the increasing thickness of the passivation layer. In the forward bias region, the negative values of capacitance are an attractive result of this study. This negative capacitance disappears in presence of the passivation layer. Copyright © 2010 John Wiley & Sons, Ltd.
      Keywords
      (Ni/Au)/AlxGa1-xN/AlN/GaN heterostructures
      Frequency dependence
      Interface states
      Negative capacitance
      Series resistance
      Frequency dependence
      Heterostructures
      Interface state
      Negative capacitance
      Series resistances
      Aluminum
      Capacitance
      Crystals
      Gallium
      Heterojunctions
      Silicon nitride
      Passivation
      Permalink
      http://hdl.handle.net/11693/28579
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/sia.3248
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      • Nanotechnology Research Center (NANOTAM) 1006
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