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dc.contributor.authorSezen, H.en_US
dc.contributor.authorSuzer, S.en_US
dc.date.accessioned2016-02-08T12:24:13Z
dc.date.available2016-02-08T12:24:13Z
dc.date.issued2010en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/28576
dc.description.abstractThin films of CdS and CdSe are deposited on HF-cleaned Si O2 /Si substrates containing ∼5 nm thermally grown silicon oxide. x-ray photoelectron spectroscopy (XPS) data of these films are collected in a dynamic mode, which is based on recording the spectrum under modulation with an electrical signal in the form of ±10 V square-wave pulses. Accordingly, all peaks are twined and shifted with respect to the grounded spectrum. The binding energy difference between the twinned peaks of a dielectric system has a strong dependence on the frequency of the electrical stimuli. Therefore, dynamic XPS provides a means to extract additional properties of dielectric materials, such as effective resistance and capacitance. In this work, the authors report a new advancement to the previous method, where they now probe a photodynamic process. For this reason, photoillumination is introduced as an additional form of stimulus and used to investigate the combined optical and electrical response of the photoconductive thin films of CdS and CdSe using dynamic XPS.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.3289319en_US
dc.subjectCdSen_US
dc.subjectCdSe filmsen_US
dc.subjectCharging/dischargingen_US
dc.subjectDielectric systemsen_US
dc.subjectDynamic modesen_US
dc.subjectElectrical responseen_US
dc.subjectElectrical signalen_US
dc.subjectElectrical stimulien_US
dc.subjectPhotodynamic processen_US
dc.subjectPhotoilluminationen_US
dc.subjectSi substratesen_US
dc.subjectSquare-waveen_US
dc.subjectXPSen_US
dc.subjectBinding energyen_US
dc.subjectCadmium alloysen_US
dc.subjectCadmium compoundsen_US
dc.subjectCadmium sulfideen_US
dc.subjectData storage equipmenten_US
dc.subjectDielectric materialsen_US
dc.subjectDynamic responseen_US
dc.subjectMaterials propertiesen_US
dc.subjectPhotoelectricityen_US
dc.subjectPhotoionizationen_US
dc.subjectPhotonsen_US
dc.subjectSilicon compoundsen_US
dc.subjectSilicon oxidesen_US
dc.subjectThin filmsen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleCharging/discharging dynamics of CdS and CdSe films under photoillumination using dynamic x-ray photoelectron spectroscopyen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage639en_US
dc.citation.epage642en_US
dc.citation.volumeNumber28en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1116/1.3289319en_US
dc.publisherA I P Publishing LLCen_US
dc.identifier.eissn1944-2807


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