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dc.contributor.authorEl-Atab, N.en_US
dc.contributor.authorTurgut, Berk Berkanen_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.date.accessioned2016-02-08T12:23:24Z
dc.date.available2016-02-08T12:23:24Z
dc.date.issued2015en_US
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/11693/28541
dc.description.abstractIn this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> tunnel oxide is demonstrated. Using C-V<inf>gate</inf> measurements, the memory showed a large memory window at low program/erase voltages. The analysis of the C-V characteristics shows that electrons are being stored in the graphene-nanoplatelets during the program operation. In addition, the retention characteristic of the memory is studied by plotting the hysteresis measurement vs. time. The measured excellent retention characteristic (28.8% charge loss in 10 years) is due to the large electron affinity of the graphene. The analysis of the plot of the energy band diagram of the MOS structure further proves its good retention characteristic. Finally, the results show that such graphene nanoplatelets are promising in future low-power non-volatile memory devices.en_US
dc.language.isoEnglishen_US
dc.source.titleECS Transactionsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1149/06614.0039ecsten_US
dc.subjectC (programming language)en_US
dc.subjectCharge trappingen_US
dc.subjectData storage equipmenten_US
dc.subjectDigital storageen_US
dc.subjectElectron affinityen_US
dc.subjectMemory architectureen_US
dc.subjectC-V characteristicen_US
dc.subjectCharge trapping layersen_US
dc.subjectEnergy-band diagramen_US
dc.subjectGraphene nanoplateletsen_US
dc.subjectHysteresis measurementsen_US
dc.subjectNonvolatile memory devicesen_US
dc.subjectProgram operationen_US
dc.subjectRetention characteristicsen_US
dc.subjectGrapheneen_US
dc.titleGraphene Nanoplatelets Embedded in HfO2 for MOS Memoryen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage39en_US
dc.citation.epage43en_US
dc.citation.volumeNumber66en_US
dc.citation.issueNumber14en_US
dc.identifier.doi10.1149/06614.0039ecsten_US
dc.publisherElectrochemical Society Inc.en_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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