Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures

Date
2010
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
2010 23rd Annual Meeting of the IEEE Photonics Society
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
289 - 290
Language
English
Journal Title
Journal ISSN
Volume Title
Series
Abstract

Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.

Course
Other identifiers
Book Title
Citation
Published Version (Please cite this version)