Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
Date
2010
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Source Title
2010 23rd Annual Meeting of the IEEE Photonics Society
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IEEE
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Pages
289 - 290
Language
English
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Abstract
Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.
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Keywords
Controlled growth , Crystal material , Dislocation densities , Epitaxial lateral overgrowth , High efficiency , High-quality materials , InGaN/GaN , Laser diodes , Light emitters , Quantum heterostructures , Quantum structure , Dislocations (crystals) , Gallium alloys , Gallium nitride , Light emission , Light emitting diodes , Optoelectronic devices , Epitaxial growth