Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
2010 23rd Annual Meeting of the IEEE Photonics Society
289 - 290
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Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters . ©2010 IEEE.
Epitaxial lateral overgrowth
Light emitting diodes