Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
Author
Sarı, Emre
Akyuz, Özgün
Choi, E. -G.
Lee I.-H.
Baek J.H.
Demir, Hilmi Volkan
Date
2010Source Title
2010 23rd Annual Meeting of the IEEE Photonics Society
Publisher
IEEE
Pages
289 - 290
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.
Keywords
Controlled growthCrystal material
Dislocation densities
Epitaxial lateral overgrowth
High efficiency
High-quality materials
InGaN/GaN
Laser diodes
Light emitters
Quantum heterostructures
Quantum structure
Dislocations (crystals)
Gallium alloys
Gallium nitride
Light emission
Light emitting diodes
Optoelectronic devices
Epitaxial growth