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      Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures

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      Author
      Sarı, Emre
      Akyuz, Özgün
      Choi, E. -G.
      Lee I.-H.
      Baek J.H.
      Demir, Hilmi Volkan
      Date
      2010
      Source Title
      2010 23rd Annual Meeting of the IEEE Photonics Society
      Publisher
      IEEE
      Pages
      289 - 290
      Language
      English
      Type
      Conference Paper
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      Abstract
      Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.
      Keywords
      Controlled growth
      Crystal material
      Dislocation densities
      Epitaxial lateral overgrowth
      High efficiency
      High-quality materials
      InGaN/GaN
      Laser diodes
      Light emitters
      Quantum heterostructures
      Quantum structure
      Dislocations (crystals)
      Gallium alloys
      Gallium nitride
      Light emission
      Light emitting diodes
      Optoelectronic devices
      Epitaxial growth
      Permalink
      http://hdl.handle.net/11693/28501
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/PHOTONICS.2010.5698873
      Collections
      • Department of Electrical and Electronics Engineering 3597
      • Institute of Materials Science and Nanotechnology (UNAM) 1831
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