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dc.contributor.authorSarı, Emreen_US
dc.contributor.authorNizamoğlu, Sedaten_US
dc.contributor.authorChoi J.H.en_US
dc.contributor.authorLee, S.J.en_US
dc.contributor.authorBaik, K.H.en_US
dc.contributor.authorLee I.H.en_US
dc.contributor.authorBaek J.H.en_US
dc.contributor.authorHwang, S.-M.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialSingapore, Singaporeen_US
dc.date.accessioned2016-02-08T12:21:02Z
dc.date.available2016-02-08T12:21:02Z
dc.date.issued2010en_US
dc.identifier.urihttp://hdl.handle.net/11693/28451
dc.descriptionDate of Conference: 14-16 Dec. 2010en_US
dc.description.abstractWe present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.en_US
dc.language.isoEnglishen_US
dc.source.title2010 Photonics Global Conferenceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PGC.2010.5705998en_US
dc.subjectA-planeen_US
dc.subjectAbsorption edgesen_US
dc.subjectCarrier dynamicsen_US
dc.subjectElectro-absorptionen_US
dc.subjectInGaN/GaNen_US
dc.subjectNon-polaren_US
dc.subjectNonpolar structuresen_US
dc.subjectQuantum confined stark effecten_US
dc.subjectQuantum heterostructuresen_US
dc.subjectQuantum structureen_US
dc.subjectTime-resolved photoluminescenceen_US
dc.subjectAbsorptionen_US
dc.subjectCrystalsen_US
dc.subjectElectric fieldsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectSpectroscopyen_US
dc.subjectPhotonicsen_US
dc.titlePolar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavioren_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.identifier.doi10.1109/PGC.2010.5705998en_US
dc.publisherIEEEen_US


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