Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior
Date
2010
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
2010 Photonics Global Conference
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.
Course
Other identifiers
Book Title
Keywords
A-plane , Absorption edges , Carrier dynamics , Electro-absorption , InGaN/GaN , Non-polar , Nonpolar structures , Quantum confined stark effect , Quantum heterostructures , Quantum structure , Time-resolved photoluminescence , Absorption , Crystals , Electric fields , Semiconductor quantum wells , Spectroscopy , Photonics