Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior
Author(s)
Date
2010Source Title
2010 Photonics Global Conference
Publisher
IEEE
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.
Keywords
A-planeAbsorption edges
Carrier dynamics
Electro-absorption
InGaN/GaN
Non-polar
Nonpolar structures
Quantum confined stark effect
Quantum heterostructures
Quantum structure
Time-resolved photoluminescence
Absorption
Crystals
Electric fields
Semiconductor quantum wells
Spectroscopy
Photonics
Permalink
http://hdl.handle.net/11693/28451Published Version (Please cite this version)
http://dx.doi.org/10.1109/PGC.2010.5705998Collections
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