Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior
2010 Photonics Global Conference
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We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.
Quantum confined stark effect
Semiconductor quantum wells
Published Version (Please cite this version)http://dx.doi.org/10.1109/PGC.2010.5705998
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