Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior
Demir, H. V.
2010 Photonics Global Conference, PGC 2010
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28451
We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.
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