Silicon-germanium multi-quantum wells for extended functionality and lower cost integration
Okyay, A., K.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28434
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
- Conference Paper