Silicon-germanium multi-quantum wells for extended functionality and lower cost integration
Okyay, A., K.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
530 - 531
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28434
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
- Conference Paper 2294