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      • Department of Electrical and Electronics Engineering
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      Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

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      Author(s)
      Onbasli, M.C.
      Yesilyurt, Alper
      Yu H.Y.
      Nayfeh, A.M.
      Okyay, Ali Kemal
      Date
      2010
      Source Title
      2010 23rd Annual Meeting of the IEEE Photonics Society
      Publisher
      IEEE
      Pages
      530 - 531
      Language
      English
      Type
      Conference Paper
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      Abstract
      Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
      Keywords
      Epitaxial techniques
      High-quality films
      Low-dislocation density
      Low-leakage current
      Lower cost
      Multiquantum wells
      Nanostructural
      Quantum well
      Silicon germanium
      TEM
      XPS
      Germanium
      Semiconductor quantum wells
      Permalink
      http://hdl.handle.net/11693/28434
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/PHOTONICS.2010.5698995
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
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