Silicon-germanium multi-quantum wells for extended functionality and lower cost integration
Author
Onbasli, M.C.
Yesilyurt, Alper
Yu H.Y.
Nayfeh, A.M.
Okyay, Ali Kemal
Date
2010Source Title
2010 23rd Annual Meeting of the IEEE Photonics Society
Publisher
IEEE
Pages
530 - 531
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
Keywords
Epitaxial techniquesHigh-quality films
Low-dislocation density
Low-leakage current
Lower cost
Multiquantum wells
Nanostructural
Quantum well
Silicon germanium
TEM
XPS
Germanium
Semiconductor quantum wells