Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

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Author
Onbasli, M.C.
Yesilyurt, A.
Yu H.Y.
Nayfeh, A.M.
Okyay, A., K.
Date
2010
Journal Title
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages
530 - 531
Language
English
Type
Conference Paper
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Please cite this item using this persistent URL
http://hdl.handle.net/11693/28434
Abstract
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
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http://dx.doi.org/10.1109/PHOTONICS.20http://dx.doi.org/10.5698995
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