Silicon-germanium multi-quantum wells for extended functionality and lower cost integration

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Author
Onbasli, M.C.
Yesilyurt, A.
Yu H.Y.
Nayfeh, A.M.
Okyay, A., K.
Date Issued
2010
Journal Title
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Language
English
Type
Conference Paper
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http://hdl.handle.net/11693/28434
Abstract
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
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http://dx.doi.org/10.1109/PHOTONICS.20http://dx.doi.org/10.5698995
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