Silicon-germanium multi-quantum wells for extended functionality and lower cost integration
Date
2010Source Title
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages
530 - 531
Language
English
Type
Conference PaperItem Usage Stats
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Show full item recordAbstract
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
Keywords
Epitaxial techniquesHigh-quality films
Low-dislocation density
Low-leakage current
Lower cost
Multiquantum wells
Nanostructural
Quantum well
Silicon germanium
TEM
XPS
Germanium
Semiconductor quantum wells