Silicon-germanium multi-quantum wells for extended functionality and lower cost integration
2010 23rd Annual Meeting of the IEEE Photonics Society
530 - 531
Item Usage Stats
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current. ©2010 IEEE.
Semiconductor quantum wells