Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures
Proceedings of SPIE
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We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.
KeywordsBlue light emitting diodes
Electron hole pairs
Inductive coupled plasma
Multiple quantum wells
Surface plasmon coupling
Light emitting diodes
Semiconductor quantum wells
Published Version (Please cite this version)http://dx.doi.org/10.1117/12.869465
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