Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
Okyay, A., K.
2015 IEEE 35th International Conference on Electronics and Nanotechnology, ELNANO 2015 - Conference Proceedings
Institute of Electrical and Electronics Engineers Inc.
218 - 221
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28374
Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.
Keywordsatomic layer deposition
hollow cathode plasma
thin film transistors
Atomic layer deposition
Low temperature effects
Pulsed laser deposition
Thin film transistors
Low impurity concentrations
Low temperature synthesis
Proof of concept
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