Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)
218 - 221
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Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.
KeywordsAtomic layer deposition
Low temperature effects
Pulsed laser deposition
Thin film transistors
Low impurity concentrations
Low temperature synthesis
Proof of concept
Published Version (Please cite this version)http://dx.doi.org/10.1109/ELNANO.2015.7146876
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