Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
Author
Bıyıklı, Necmi
Ozgit-Akgun, Çağla
Goldenberg, Eda
Haider, Ali
Kızır, Seda
Uyar, Tamer
Bolat, Sami
Tekcan, Burak
Okyay, Ali Kemal
Date
2015Source Title
2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)
Publisher
IEEE
Pages
218 - 221
Language
English
Type
Conference PaperItem Usage Stats
179
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134
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Abstract
Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.
Keywords
Atomic layer depositionAtoms
Cathodes
Deposition
Electrodes
Electron sources
Low temperature effects
Nanofibers
Nanostructures
Nanotechnology
Nitrides
Photodetectors
Photons
Pulsed laser deposition
Temperature
Thin film transistors
Hollow cathodes
Hollow nanofibers
III-Nitride
Low impurity concentrations
Low temperature synthesis
Low temperatures
Proof of concept
UV photodetectors
Thin films
Permalink
http://hdl.handle.net/11693/28374Published Version (Please cite this version)
http://dx.doi.org/10.1109/ELNANO.2015.7146876Collections
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