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      Design of high power S-band GaN MMIC power amplifiers for WiMAX applications

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      Author(s)
      Cengiz, Ömer
      Kelekçi, Özgür
      Arıkan, Galip Orkun
      Özbay, Ekmel
      Palamutçuoǧullari O.
      Date
      2011
      Source Title
      2011 30th URSI General Assembly and Scientific Symposium, URSIGASS 2011
      Publisher
      IEEE
      Language
      English
      Type
      Conference Paper
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      Abstract
      This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of these MMICs were combined by using off-chip Lange Couplers, 45.3 dBm output power with a 45%PAE @3.5Ghz and 16 dB small signal gain were obtained with less than 0.2 dB gain ripple in the 3.3-3.8 GHz frequency range. © 2011 IEEE.
      Keywords
      Gain ripples
      GHz frequencies
      High-power
      Lange couplers
      MMIC power amplifier
      Off-chip
      Output power
      Small signal gain
      Gallium nitride
      Power amplifiers
      Wimax
      Permalink
      http://hdl.handle.net/11693/28327
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/URSIGASS.2011.6050546
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      • Nanotechnology Research Center (NANOTAM) 1063
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