Plasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectors
Author
Polat, Kazım Gürkan
Aygun, Levent Erdal
Okyay, Ali Kemal
Date
2011Source Title
IEEE Photonic Society 24th Annual Meeting
Publisher
IEEE
Pages
733 - 734
Language
English
Type
Conference PaperItem Usage Stats
161
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123
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Abstract
Schottky photodetectors have been intensively investigated due to their high speeds, low device capacitances, and sensitivity in telecommunication standard bands, in the 0.8μm to 1.5μm wavelength range. Due to extreme cost advantage of Silicon over compound semiconductors, and seamless integration with VLSI circuits, metal-Silicon Schottky photodetectors are attractive low cost alternatives to InGaAs technology. However, efficiencies of Schottky type photodetectors are limited due to thin absorption region. Previous efforts such as resonant cavities increase the sensitivity using optical techniques, however their integration with VLSI circuits is difficult. Therefore, there is a need for increasing Schottky detector sensitivity, in a VLSI compatible fashion. To address this problem, we design plasmonic grating structures to increase light absorption at the metal-Silicon Schottky interface. There are earlier reports of plasmonic structures to increase Schottky photodetector sensitivity, with a renowned interest in the utilization of plasmonic effects to improve the absorption characteristics of metal-semiconductor interfaces. In this work, we report the design, fabrication and characterization of Gold-Silicon Schottky photodetectors with enhanced absorption in the near infrared region. © 2011 IEEE.
Keywords
Absorption characteristicsAbsorption region
Compound semiconductors
Cost advantages
Device capacitance
Enhanced absorption
Grating structures
Low costs
Metal semiconductor interface
Near Infrared
Near infrared region
Optical technique
Plasmonic
Schottky
Schottky detectors
Schottky photodetectors
Seamless integration
Silicon-based
Telecommunication standards
Wavelength ranges
Infrared devices
Light absorption
Photodetectors
Plasmons
VLSI circuits
Semiconducting silicon compounds