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      Plasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectors

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      Author
      Polat, Kazım Gürkan
      Aygun, Levent Erdal
      Okyay, Ali Kemal
      Date
      2011
      Source Title
      IEEE Photonic Society 24th Annual Meeting
      Publisher
      IEEE
      Pages
      733 - 734
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
      161
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      123
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      Abstract
      Schottky photodetectors have been intensively investigated due to their high speeds, low device capacitances, and sensitivity in telecommunication standard bands, in the 0.8μm to 1.5μm wavelength range. Due to extreme cost advantage of Silicon over compound semiconductors, and seamless integration with VLSI circuits, metal-Silicon Schottky photodetectors are attractive low cost alternatives to InGaAs technology. However, efficiencies of Schottky type photodetectors are limited due to thin absorption region. Previous efforts such as resonant cavities increase the sensitivity using optical techniques, however their integration with VLSI circuits is difficult. Therefore, there is a need for increasing Schottky detector sensitivity, in a VLSI compatible fashion. To address this problem, we design plasmonic grating structures to increase light absorption at the metal-Silicon Schottky interface. There are earlier reports of plasmonic structures to increase Schottky photodetector sensitivity, with a renowned interest in the utilization of plasmonic effects to improve the absorption characteristics of metal-semiconductor interfaces. In this work, we report the design, fabrication and characterization of Gold-Silicon Schottky photodetectors with enhanced absorption in the near infrared region. © 2011 IEEE.
      Keywords
      Absorption characteristics
      Absorption region
      Compound semiconductors
      Cost advantages
      Device capacitance
      Enhanced absorption
      Grating structures
      Low costs
      Metal semiconductor interface
      Near Infrared
      Near infrared region
      Optical technique
      Plasmonic
      Schottky
      Schottky detectors
      Schottky photodetectors
      Seamless integration
      Silicon-based
      Telecommunication standards
      Wavelength ranges
      Infrared devices
      Light absorption
      Photodetectors
      Plasmons
      VLSI circuits
      Semiconducting silicon compounds
      Permalink
      http://hdl.handle.net/11693/28273
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/PHO.2011.6110759
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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