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dc.contributor.authorSalihoglu O.en_US
dc.contributor.authorMuti, A.en_US
dc.contributor.authorKutluer, K.en_US
dc.contributor.authorTansel, T.en_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorKocabas, C.en_US
dc.contributor.authorAydinli, A.en_US
dc.date.accessioned2016-02-08T12:15:08Z
dc.date.available2016-02-08T12:15:08Z
dc.date.issued2012en_US
dc.identifier.issn0277786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/28242
dc.description.abstractWe have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors. © 2012 SPIE.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.920406en_US
dc.subjectAl2O3en_US
dc.subjectALDen_US
dc.subjectInAs/GaSben_US
dc.subjectPassivationen_US
dc.subjectPhotodetectoren_US
dc.subjectSuperlatticeen_US
dc.subjectAluminumen_US
dc.subjectIndium antimonidesen_US
dc.subjectInfrared radiationen_US
dc.subjectPassivationen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectSuperlatticesen_US
dc.subjectAl2O3en_US
dc.subjectALDen_US
dc.subjectAtomic layer depositeden_US
dc.subjectElectrical performanceen_US
dc.subjectInAs/GaSben_US
dc.subjectInAs/GaSb superlatticesen_US
dc.subjectMid wave infrared (MWIR)en_US
dc.subjectSelf-cleaning processen_US
dc.subjectAtomic layer depositionen_US
dc.titlePassivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3en_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics, Bilkent University, 06800 Ankara, Turkey; Department of Physics, Middle East Technical University, 06531 Ankar, Turkeyen_US
dc.citation.volumeNumber8353en_US
dc.identifier.doi10.1117/12.920406en_US
dc.publisherSPIEen_US


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