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      Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells

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      Author
      Chowdhury F.I.
      İslam, K.
      Alkış, Sabri
      Ortaç, Bülend
      Alevli, Mustafa
      Dietz, N.
      Okyay, Ali Kemal
      Nayfeh, A.
      Date
      2015-05
      Source Title
      ECS Transactions
      Print ISSN
      1938-5862
      Publisher
      Electrochemical Society Inc.
      Pages
      9 - 16
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      In this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average J<inf>sc</inf> of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% higher than the average J<inf>sc</inf> of the reference cell which was 5.79 mA/cm2. Average efficiency of InN NPs coated cells showed 14.16% increase from 3.32% to 3.79%. Peak EQE has increased from 44.8% at 500 nm to 51.67% at 510 nm and peak IQE has increased from 51.70% at 510 nm to 68.38% at 500 nm for InN NPs coated cell. Further study shows that EQE change is larger between 510 nm-700 nm compared to IQE change indicting a surface scattering mechanism that reduces the reflectivity. However, between 400 nm-510 nm IQE change is larger than EQE change which indicates that energy downshifting mechanism is dominating. So overall performance enhancement can be attributed to the scattering and photoluminescence properties of InN NPs that enhances absorption inside a-Si: H solar cells. © The Electrochemical Society.
      Keywords
      Indium
      Light scattering
      Nanoparticles
      Nanotechnology
      Nitrides
      Silicon
      Solar cells
      Surface scattering
      A-Si:H solar cells
      Average efficiencies
      Indium nitride
      N-i-p solar cells
      Nanoparticle (NPs)
      Performance enhancements
      Photoluminescence properties
      Scattering mechanisms
      Silicon solar cells
      Permalink
      http://hdl.handle.net/11693/28241
      Published Version (Please cite this version)
      http://dx.doi.org/10.1149/06640.0009ecst
      Collections
      • Department of Electrical and Electronics Engineering 3597
      • Institute of Materials Science and Nanotechnology (UNAM) 1831
      • Nanotechnology Research Center (NANOTAM) 1026
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