Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells
Author
Chowdhury F.I.
İslam, K.
Alkış, Sabri
Ortaç, Bülend
Alevli, Mustafa
Dietz, N.
Okyay, Ali Kemal
Nayfeh, A.
Date
2015-05Source Title
ECS Transactions
Print ISSN
1938-5862
Publisher
Electrochemical Society Inc.
Pages
9 - 16
Language
English
Type
Conference PaperItem Usage Stats
160
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139
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Abstract
In this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average J<inf>sc</inf> of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% higher than the average J<inf>sc</inf> of the reference cell which was 5.79 mA/cm2. Average efficiency of InN NPs coated cells showed 14.16% increase from 3.32% to 3.79%. Peak EQE has increased from 44.8% at 500 nm to 51.67% at 510 nm and peak IQE has increased from 51.70% at 510 nm to 68.38% at 500 nm for InN NPs coated cell. Further study shows that EQE change is larger between 510 nm-700 nm compared to IQE change indicting a surface scattering mechanism that reduces the reflectivity. However, between 400 nm-510 nm IQE change is larger than EQE change which indicates that energy downshifting mechanism is dominating. So overall performance enhancement can be attributed to the scattering and photoluminescence properties of InN NPs that enhances absorption inside a-Si: H solar cells. © The Electrochemical Society.
Keywords
IndiumLight scattering
Nanoparticles
Nanotechnology
Nitrides
Silicon
Solar cells
Surface scattering
A-Si:H solar cells
Average efficiencies
Indium nitride
N-i-p solar cells
Nanoparticle (NPs)
Performance enhancements
Photoluminescence properties
Scattering mechanisms
Silicon solar cells
Permalink
http://hdl.handle.net/11693/28241Published Version (Please cite this version)
http://dx.doi.org/10.1149/06640.0009ecstCollections
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