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dc.contributor.authorNazirzadeh, M.A.en_US
dc.contributor.authorAtar F.B.en_US
dc.contributor.authorTurgut, B.B.en_US
dc.contributor.authorOkyay, A., K.en_US
dc.date.accessioned2016-02-08T12:14:12Z
dc.date.available2016-02-08T12:14:12Z
dc.date.issued2015en_US
dc.identifier.issn0277786X
dc.identifier.urihttp://hdl.handle.net/11693/28208
dc.description.abstractWe demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2078913en_US
dc.subjecthot electronsen_US
dc.subjectinfrared detectorsen_US
dc.subjectPlasmonicsen_US
dc.subjectSchottky diodesen_US
dc.subjectSiliconen_US
dc.subjectAtomic layer depositionen_US
dc.subjectCostsen_US
dc.subjectElectric connectorsen_US
dc.subjectHeterojunctionsen_US
dc.subjectHigh temperature applicationsen_US
dc.subjectHot electronsen_US
dc.subjectInfrared detectorsen_US
dc.subjectInfrared devicesen_US
dc.subjectLithographyen_US
dc.subjectMetalsen_US
dc.subjectMetamaterial antennasen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotolithographyen_US
dc.subjectPhotonic devicesen_US
dc.subjectPhotonicsen_US
dc.subjectPhotonsen_US
dc.subjectPlasmonsen_US
dc.subjectRapid thermal annealingen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting siliconen_US
dc.subjectSiliconen_US
dc.subjectSilicon detectorsen_US
dc.subjectHigh resolution lithographyen_US
dc.subjectInternal photoemissionen_US
dc.subjectNear infrared photodetectorsen_US
dc.subjectPlasmonicsen_US
dc.subjectSchottky diodesen_US
dc.subjectSpectroscopy applicationsen_US
dc.subjectSub-micron lithographyen_US
dc.subjectTransparent conductive oxidesen_US
dc.subjectSilicon wafersen_US
dc.titleUltra-low-cost near-infrared photodetectors on siliconen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.volumeNumber9367en_US
dc.identifier.doi10.1117/12.2078913en_US
dc.publisherSPIEen_US


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